Method of forming semiconducting materials and barriers using a multiple chamber arrangement

A process for glow discharge deposition in an apparatus comprising, a first deposition chamber adapted to be evacuated, first gas introducing means for introducing a first gaseous material into said first deposition chamber, first electrode means disposed in said first deposition chamber, a second deposition chamber adapted to be evacuated, second gas introducing means for introducing a second gaseous material into said second deposition chamber, second electrode means disposed in said second deposition chamber, first restricting means for restricting the flow of at least one of said first and second gaseous materials from one of said first and second deposition chambers into the other one of said first and second deposition chambers, said first restricting means being disposed between said first deposition chamber and said second deposition chamber, a third deposition chamber adapted to be evacuated, third gas introducing means for introducing a third gaseous material into said third deposition chamber, third electrode means disposed in said third deposition chamber, second restricting means for restricting the flow of at least one of said second and third gaseous materials from one of said second and third deposition chambers into the other one of said second and third deposition chambers said second restricting means being disposed between said second deposition chamber and said third deposition chamber, and transporting means for transporting a substrate, said process comprising the steps of:

• disposing said substrate in said first deposition chamber;
• introducing said first gaseous material in said first deposition chamber and applying a first electric field to a first region in said first deposition chamber by said first electrode means so as to generate a first glow discharge, whereby a first layer is deposited on said substrate;
• transporting said substrate on which said first layer is deposited from said first deposition chamber to said second deposition chamber through said first restricting means, while each interior of said deposition chambers is shielded from an external atmosphere;
• disposing said substrate on which said first layer is deposited in said second deposition chamber;
• introducing said second gaseous material in said second deposition chamber and applying a second electric field to a second region in said second deposition chamber by said second electrode so as to generate a second glow discharge, whereby a second layer is deposited on said first layer;
• transporting said substrate on which said first layer and said second layer are deposited from said second deposition chamber to said third deposition chamber through said second restricting means, while each interior of said second and third deposition chambers is shielded from the external atmosphere;
• disposing said substrate on which said first layer and said second layer are deposited in said third deposition chamber;
• and
• introducing said third gaseous material in said third deposition chamber and applying a third electric field to a third region in said third deposition chamber by said third electrode means so as to generate a third glow discharge, whereby a third layer is deposited on said second layer.

A method of making a semiconductor device on a substrate comprising the steps of:

• providing a first and second vacuum chambers;
• evacuating said first and second vacuum chambers;
• disposing said substrate in said first vacuum chamber;
• introducing a first gaseous material into said first vacuum chamber;
• applying a first glow discharge to a region in said first vacuum chamber, said first glow discharge depositing a first film on said substrate while maintaining said first gaseous material at sub-atmospheric pressure and while isolating said first vacuum chamber;
• transporting said substrate with said first film from said first vacuum chamber into said second vacuum chamber;
• introducing a second gaseous material into said second vacuum chamber;
• and,
• applying a second glow discharge to a region in said second vacuum chamber, said second glow discharge depositing a second film on said substrate while maintaining said second gaseous material at sub-atmospheric pressure, and while isolating said second vacuum chamber wherein at least one of said first and second gaseous materials and at least one of said films comprises silicon and hydrogen.

A process for making a film on the surface of a substrate using a gaseous material at sub-atmospheric pressure suitable for sustaining a glow discharge in a vacuum chamber having first and second electrodes juxtaposed in face-to-face spaced relation with said second electrode having an internal cavity and a plurality of apertures formed there through, comprising the steps of:

• positioning said electrodes in face-to-face spaced relation;
• disposing said substrate on said first electrode;
• introducing a gaseous material comprising silicon and hydrogen at sub-atmospheric pressure into said internal cavity and through said plurality of apertures in said second electrode;
• and,
• maintaining a glow discharge in said gaseous material between said electrodes to form said film on said substrate.

A method of making a semiconductor device on a semitransparent substrate having a layer of conducting metal oxide comprising indium comprising the steps of:

• providing a vacuum chamber having a first electrode;
• disposing said substrate on the surface of said first electrode in said vacuum chamber;
• introducing a gaseous material comprising phosphorous at sub-atmospheric pressure into said vacuum chamber;
• applying a first glow discharge to a region in said vacuum chamber to fabricate a first film comprising phosphorous on said layer of conducting metal oxide comprising indium on the surface of said substrate;
• introducing a second gaseous material comprising silicon and hydrogen at sub-atmospheric pressure into said vacuum chamber;
• and,
• applying a second glow discharge to a region in said vacuum chamber to fabricate a second film comprising silicon and hydrogen on said first film so that a phosphorous-doped ohmic-contact is formed between said films.

A method of fabricating a semiconductor device comprising the steps of:

• providing a first and second vacuum chambers;
• providing an airlock in said first vacuum chamber;
• disposing a substrate in said first vacuum chamber in a first gaseous material at atmospheric pressure while said airlock is closed;
• evacuating said first and said second vacuum chambers;
• transporting said substrate from said first vacuum chamber to said second vacuum chamber;
• introducing a second gaseous material comprising silicon and hydrogen into said second vacuum chamber;
• and,
• applying a glow discharge to a region in said second vacuum chamber to said second gaseous material, said glow discharge depositing a film comprising silicon on said substrate while maintaining said second gaseous material at sub-atmospheric pressure, while maintaining said substrate at a temperature and while said airlock is closed.

The method of producing a semiconductor device comprising the steps of:

• providing a first and a second evacuable enclosures;
• providing a first airlock in said first enclosure;
• evacuating said first enclosure;
• introducing a first gaseous material comprising silicon in said first enclosure;
• generating a first glow discharge in said first gaseous material in said first enclosure, said first glow discharge depositing a first film comprising silicon on said substrate while maintaining first gaseous material at subatmospheric pressure and while said first airlock is closed;
• providing a second airlock in said second enclosure;
• evacuating said second enclosure;
• transporting said substrate from said first enclosure through a zone outside of said first enclosure into said second enclosure;
• positioning said substrate in said second enclosure;
• evacuating said second enclosure;
• introducing a second gaseous material in said second enclosure;
• and,
• generating a second glow discharge in said second enclosure, said second glow discharge depositing a second film on said first film comprising silicon while maintaining said second gaseous material at subatmospheric pressure and while said second airlock is closed.