Method for manufacturing an integrated circuit arrangement
AssigneeSiemens Aktiengesellschaft
InventorsUdo Schwalke, Fritz Bieringer
Life of this patent
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Abstract
A trench structure is produced in a substrate wafer in a two-step trench process. A trench mask is produced in a first etching step and the trench structure is realized in the substrate wafer in a second etching step. An auxiliary lithography structure is produced in the substrate wafer in the trench process. A protective structure that protects the substrate wafer in the region of the auxiliary lithography structure against an etching attack in the second etching step is formed in the region of the auxiliary lithography structure in the manufacture of the trench mask.
Claims9
A method for manufacturing a trench structure and an auxiliary lithography structure employed in an integrated circuit arrangement, comprising the steps of:
- producing the trench structure in a substrate wafer by use of a trench mask in a trench process comprising at least first and second etching steps, the first etching step comprising producing the trench mask by structuring at least one layer and the second etching step comprising providing the trench structure in the substrate wafer;
- producing the auxiliary lithography structure outside the circuit arrangement during the trench process on the substrate wafer;
- and
- forming a protective structure for protecting the substrate wafer in a region of the auxiliary lithography structure against an etching attack during the first etching step in the manufacture of the trench mask.
A method for manufacturing a trench structure and an auxiliary lithography structure employed in an integrated circuit arrangement, comprising the steps of:
- providing a protective insulating layer on a substrate wafer;
- in a first etching step, producing a trench mask by structuring the protective layer at a region where said trench mask is desired so that an upper surface of said substrate wafer is exposed;
- in a second etching step, providing the trench structure in the substrate wafer by use of said trench mask;
- producing the auxiliary lithography structure outside the circuit arrangement during steps for creating the trench structure;
- and
- said protective layer protecting the substrate wafer in a region of the auxiliary lithography structure against an etching attack during the second etching step in the manufacture of the trench mask.
Dependencies are inferred from the claim text.