Process for the preparation of a thin film transistor
AssigneeGoldstar Co., Ltd.
InventorJung J. Kim
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Abstract
A process for the preparation of a thin film transistor is provided which includes sequentially depositing a gate insulating layer, an amorphous silicon layer, and an n+ amorphous silicon layer. The n+ amorphous silicon layer is disposed between source and drain electrodes and is oxidized by a plasma oxidation process so that switching properties, interface properties between the amorphous silicon layer and the n+ amorphous silicon layer and a production yield are enhanced, while the preparation steps of forming an etch stopper and removing the n+ amorphous silicon layer disposed between the source electrode and the drain electrode are reduced.
Claims2
A process for the preparation of a thin film transistor, comprising the steps of:
- providing a gate electrode on a glass substrate;
- depositing a gate insulating layer, an amorphous silicon layer, and an n.sup.+ amorphous silicon layer over said gate electrode;
- patterning said amorphous silicon layer and said n.sup.+ amorphous silicon layer at the same time;
- depositing and patterning an aluminum layer over said n.sup.+ amorphous silicon layer and said gate insulating layer to provide a source electrode and a drain electrode and an exposed portion of said n.sup.+ amorphous silicon layer between said source electrode and said drain electrode in a channel of the thin film transistor;
- and
- oxidizing said exposed portion of said n.sup.+ amorphous silicon layer between said source electrode and said drain electrode, and a surface of said source electrode and a surface of said drain electrode at the same time by means of a plasma oxidation process so as to provide a channel in said amorphous silicon layer and leave a passivation layer on said source electrode and drain electrode which is not removed.
Dependencies are inferred from the claim text.