Method of making field effect transistor

A method of making a semiconductor device having a gate electrode, a drain electrode, and a source electrode comprising:

• depositing a first amorphous material layer on a semiconductor active layer disposed on a semiconductor substrate;
• depositing a crystalline metal layer on said first amorphous material layer;
• forming a first resist layer on said crystalline metal layer, said first resist layer having a first opening for defining dimensions and location of a leg of a gate electrode to be formed;
• using said first resist layer as a mask, removing a portion of said crystalline metal layer, and thereafter etching said first amorphous material layer to form a first through-hole communicating with the first opening in said first resist layer and extending through said first amorphous material layer and said crystalline metal layer;
• removing said first resist layer;
• depositing a second amorphous material layer covering said crystalline metal layer and filling the first through-hole;
• forming a second resist layer on said second amorphous material layer, said second resist layer having a second opening therein, a source electrode side edge of the second opening being substantially in alignment with a source electrode side edge of the first through-hole, a drain electrode side edge of the second opening being closer to a drain electrode side than a drain electrode side edge of the first through-hole;
• using said second resist layer as a mask, etching said second amorphous material layer to form a second through-hole communicating with the second opening in said second resist layer and extending through said second amorphous material layer;
• removing said second resist layer;
• selectively depositing a gate electrode metal on said semiconductor active layer and said crystalline metal layer exposed by the second through-hole to form the gate electrode;
• removing said second amorphous material layer and, thereafter, removing said crystalline metal layer;
• and
• removing said first amorphous material layer.