Method for forming an oxide film of a semiconductor
AssigneeSamsung Electronics Co., Ltd.
InventorsChang-jip Yang, Jun-gyo Jung
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Abstract
In a method for forming a compound oxide film such as a gate oxide film of a MOS device, after a first oxide film (such as a HTO film) is formed on a semiconductor substrate by deposition at a high temperature, a second oxide film is formed below the first oxide film by wet oxidizing the surface of the semiconductor substrate, which results in a compound oxide film consisting of the HTO film and the wet oxide film. Therefore, a high quality oxide film having excellent electrical characteristics can be formed.
Claims4
A method for manufacturing a compound oxide film of a semiconductor device, comprising the steps of:
- (a) forming a first oxide film on a semiconductor substrate using a low pressure chemical vapor deposition;
- and
- (b) forming a second oxide film to a thickness between about 50 .ANG. and about 200 .ANG. between said substrate and said first oxide film using a wet oxidation process.
Dependencies are inferred from the claim text.