Sputtering apparatus
AssigneeAnelva Corporation
InventorsMasahiko Kobayashi, Nobuyuki Takahashi
Life of this patent
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Abstract
A sputtering apparatus in which transfer of a substrate and formation of a thin film on the substrate are performed in a face-up manner, the apparatus comprising a cylindrical shield member provided so as to surround a plasma discharge space in a substantially tightly enclosing state, and a process gas inlet means having gas outlet openings formed in an inner surface thereof. The cylindrical shield member is provided in its inside with a ring-like or cylindrical path so as to communicate with the process gas inlet means and so as to have a plurality of gas outlet openings. Further, a hole for inserting a pressure gauge is formed in the inner surface of the shield member.
Claims5
A sputtering apparatus including a process chamber in which transfer of a substrate and formation of a thin film on the substrate are performed in a face-up manner, said sputtering apparatus comprising:
- a substrate holder for supporting the substrate horizontally with the processing surface thereof made to face upward and opposite a target;
- a means for generating a plasma discharge in a plasma discharge space in front of said substrate;
- a cylindrical shield member for substantially tightly enclosing the plasma discharge space;
- a process gas inlet means having at least one gas outlet opening formed in an inner surface of said cylindrical shield member;
- and
- a pressure gauge having a sensor portion positioned in an opening formed in the inner surface of said cylindrical shield member.
Dependencies are inferred from the claim text.