Low temperature process and apparatus for cleaning photo-cathodes
AssigneeITT Corporation
InventorsDonald H. Stanley, Robert Peckman, Weston K. Peregoy, Jr.
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Abstract
A low temperature apparatus and process exists for cleaning photo-cathodes used A lo VW pV:image intensifier tubes. The process comprises the steps of applying atomic or molecular particles of a plasma to a photo-cathode for the purpose of removing contaminants, such as oxides, from the photo-cathode surface; and applying heat or ultra-violet radiation to the photo-cathode to remove remaining impurities. The apparatus comprises means for subjecting a photo-cathode to the atomic and molecular particle products of a plasma, and preferably, means for applying heat or ultra-violet radiation to the photo-cathode at a low temperature to remove any remaining impurities from the photo-cathode.
Claims28
In a low temperature process for cleaning a photo-cathode having a Group III/V semiconductor surface with contaminants thereon, the improvement comprising applying plasma particles to said photo-cathode to remove said contaminants from said photo-cathode.
A low temperature process for cleaning photo-cathodes, comprising the steps of:
- introducing a photo-cathode having a semiconductor surface with contaminants thereon into a chamber;
- coupling a plasma source to said chamber;
- evacuating said chamber;
- introducing process gas into said chamber;
- coupling microwave energy into said chamber in the presence of said process gas such that a plasma is formed, wherein said plasma creates atomic and molecular particles which react with said photo-cathode thereby removing contaminants from the semiconductor surface of said photo-cathode;
- and
- de-gassing said photo-cathode at a low temperature to remove remaining impurities from said photo-cathode.
An apparatus for low temperature cleaning of a photo-cathode having a Group III/V semiconductor surface thereon, comprising:
- a chamber wherein said photo-cathodes are disposed for cleaning;
- and
- means coupled to said chamber for subjecting said photo-cathode to plasma particles to remove contaminants from said Group III/V semiconductor surface of said photo-cathode.
Dependencies are inferred from the claim text.