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AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsSatoshi Arimoto, Norio Hayafuji, Mikio Deguchi, Satoshi Hamamoto
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A method for producing a semiconductor structure including a semiconductor film formed on a semiconductor substrate body via an insulating film includes: laminating a first insulating film, a first semiconductor film, and a second insulating film on the semiconductor substrate successively; forming stripe-shaped second semiconductor films of predetermined width on the second insulating film arranged periodically at a predetermined interval and covering these second semiconductor films with a third insulating film; performing zone melting recrystallization of the first semiconductor film from one end of the substrate to the opposite end along the stripe direction of the stripe-shaped second semiconductor film; etching the third insulating film and portions of the second insulating film not sandwiched by the first and second semiconductor films; oxidizing portions of the second semiconductor film and the first semiconductor film exposed in the etching step and etching and removing the second insulating film remaining after the previous etching. Thus, a semiconductor substrate including a recrystallized semiconductor film having removed sub-grain-boundaries generated during the zone melting recrystallization, is obtained by fewer process steps than in the prior art.
A method of producing a semiconductor structure including a semiconductor film disposed on an insulating film that is disposed on a semiconductor substrate body comprising:
A method of producing a semiconductor structure including a semiconductor film disposed on an insulating film that is disposed on a semiconductor substrate body comprising:
A method of producing a semiconductor structure including a semiconductor film disposed on an insulating film that is disposed on a semiconductor substrate body comprising:
A method of producing a semiconductor structure including a semiconductor film disposed on an insulating film that is disposed on a semiconductor substrate body comprising:
A method of producing a semiconductor structure including a semiconductor film disposed on an insulating film that is disposed on a semiconductor substrate body comprising:
A method of producing a semiconductor structure including a semiconductor film disposed on an insulating film that is disposed on a semiconductor substrate body comprising:
Dependencies are inferred from the claim text.
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Characterised by treatments done after the formation of the materials: crystallisation or recrystallisation of non-monocrystalline semiconductor…
Being Group IVA materials: silicon, silicon germanium or germanium
Being Group IVA semiconducting materials: silicon, silicon germanium or germanium
Materials thereof: being insulating materials
Term ended 15 Nov 2013 (estimated)
USPTO file history isn’t available for this patent, so only indexed dates are shown.
The present invention relates to a semiconductor substrate and, more particularly to a semiconductor substrate on which a semiconductor film, having crystalline grains, whose dimensions are increased by zone melting recrystallization, is formed on an insulating film. This invention also relates to a production method of the semiconductor substrate.
FIGS. 18(a) and 18(b) are a cross-sectional view and a perspective view, respectively, illustrating process steps for producing a semiconductor substrate according to the prior art. The production method of the semiconductor substrate will be described with reference to these figures.
First, as shown in FIG. 18(a), an insulating film 1 comprising, silicon oxide is formed in a thickness of about 1 .mu.m on a semiconductor substrate 10 comprising, for example, monocrystalline silicon. A semiconductor film 2 comprising amorphous silicon or polycrystalline silicon is formed in a thickness of approximately 0.5 to 5 .mu.m on the insulating film 1. An insulating film 3 comprising a silicon oxide film and a silicon nitride film which are laminated is formed in a thickness of approximately 1 to 3 .mu.m on the semiconductor film 2. A semiconductor substrate material 500 is thus produced.
FIG. 1(a) to 1(e) are cross-sectional views illustrating process steps for producing a semiconductor substrate in accordance with a first embodiment of the present invention.
FIGS. 2(a) and 2(b) are a cross-sectional view and a plan view, respectively, illustrating an inner structure of a semiconductor film for zone melting recrystallization in a process step of the first embodiment.
FIGS. 3(a) and 3(b) are cross-sectional views illustrating process steps for producing a semiconductor substrate in accordance with a second embodiment of the present invention.
FIGS. 1(a) to 1(e) are cross-sectional views illustrating process steps for producing a semiconductor substrate in accordance with a first embodiment of the present invention. In the figures, the same reference numerals as those in FIGS. 18(a) and 18(b) designate the same or corresponding elements.
A description will be given of the process steps with reference to FIGS. 1(a) to 1(e).
As in the prior art, an insulating film 1 comprising a silicon oxide film has a thickness of about 1 .mu.m on a substrate 10 comprising, for example, monocrystalline silicon. A semiconductor film 2 comprising amorphous silicon or polycrystalline silicon is formed in a thickness of approximately 0.5 to 5 .mu.m on the insulating film 1. An insulating film 3 comprising a silicon oxide film and a silicon nitride film which are laminated is formed in a thickness of approximately 1 to 3 .mu.m on the semiconductor film 2. Stripe-shaped semiconductor films 7 comprising amorphous silicon or polycrystalline silicon, each having a width within 100 to 200 .mu.m, are formed periodically with an interval of approximately 10 to 20 .mu.m on the insulating film 3. An insulating film 8 comprising a silicon oxide film and a silicon nitride film which are laminated covers the stripe-shaped semiconductor films 7 and exposed portions of the insulating film 3 between the stripe-shaped semiconductor films 7. In this way, a semiconductor substrate material 100 shown in FIG. 1(a) is produced.