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US 5,466,949 AGranted
Silicon oxide germanium resonant tunneling
AssigneeTexas Instruments Incorporated
InventorYasutoshi Okuno
Life of this patent
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Abstract
A resonant tunneling diode (400) made of a germanium quantum well (406) with silicon oxide tunneling barriers (404, 408). The silicon oxide tunneling barriers (404, 408) plus germanium quantum well (406) may be fabricated by oxygen segregation from germanium oxides to silicon oxides.
Claims5
A resonant tunneling diode, comprising:
- (a) first and second tunneling barriers, said first tunneling barrier including a silicon-oxygen compound;
- (b) a quantum well between said first and second tunneling barriers, said quantum well including germanium;
- (c) a first terminal abutting said first tunneling barrier;
- and
- (d) a second terminal abutting said second tunneling barrier.
2 more elements
Dependencies are inferred from the claim text.