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US 5,461,280 AGranted
Field emission device employing photon-enhanced electron emission
AssigneeMotorola, Inc.
InventorRobert C. Kane
Life of this patent
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Abstract
A cold cathode field emission device employs photon energy and electric field induced electron emission enhancement to provide subthreshold photoelectric emission; and, alternatively, photon-enhanced cold cathode field emission.
Claims4
A field emission device employing photon-enhanced electron field emission comprising:
- an emitter, formed of material having a predetermined surface potential barrier such that electrons require a work function of O to escape the emitter, the emitter having electrons with an energy level below the work function O of the emitter;
- a gate extraction electrode spaced from the emitter and constructed to have connected between the emitter and the gate extraction electrode a bias voltage which reduces the extent of the surface potential barrier of the emitter sufficiently to allow quantum mechanical tunneling of the electrons through the reduced extent of the surface potential barrier in response to photons impinging on the emitter and raising the energy level of the electrons;
- and
- an anode spaced from the emitter and the gate extraction electrode and positioned to receive electrons emitted from the emitter, the anode being substantially optically transparent for facilitating traversing of photons therethrough and subsequent impinging of the photons on the emitter to enhance electron field emission therefrom.
1 more element
A method of increasing electron field emission from an emitter of a field emission device comprising the steps of:
- providing the field emission device with the emitter formed of material having a predetermined surface potential barrier such that electrons require a work function of O to escape the emitter, the emitter having electrons with an energy level below the work function O of the emitter, a gate extraction electrode spaced from the emitter and an anode spaced from the emitter and the gate extraction electrode which is positioned to receive electrons emitted from the emitter;
- reducing the extent of the predetermined surface potential barrier of the emitter sufficiently to allow quantum mechanical tunneling of the electrons through the reduced extent of the surface potential barrier in response to photons impinging on the emitter and raising the energy level of the electrons by applying a bias voltage between the gate extraction electrode and the emitter;
- impinging photons on the emitter to raise the energy level of the electrons of the emitter and enhance electron field emission;
- and
- applying an electric field between the emitter and the anode to collect electrons emitted by the emitter.
2 more elements
Dependencies are inferred from the claim text.