Semiconductor device including interlayer dielectric film layers and conductive film layers

A semiconductor device comprising:

• a first interlayer dielectric film layer possessing first connection holes at specified positions on a semiconductor substrate,
• a first refractory metal film formed in a specified region including said first connection holes,
• said first refractory metal film contacting said semiconductor substrate at the bottom of said first connection holes,
• a nitride film of said first refractory metal formed on said first refractory metal film,
• a first aluminum alloy film formed on said nitride film,
• an anti-reflection film possessing second connection holes at specified positions formed on said first aluminum alloy film,
• a second interlayer dielectric film layer possessing said second connection holes formed on said anti-reflection film,
• a second refractory metal film comprised of a single layer and formed in a specified region including said second connection holes,
• said second refractory metal film contacting said first aluminum alloy film at the bottom of said second connection holes, and
• a second aluminum alloy film formed on said second refractory metal film,
• wherein thickness of said second refractory metal film is 30 to 150 nm.

A semiconductor device comprising:

• a first interlayer dielectric film layer possessing first connection holes at specified positions on a semiconductor substrate,
• a first refractory metal film formed in a specified region including said first connection holes,
• said first refractory metal film contacting said semiconductor substrate at the bottom of said first connection holes,
• a nitride film of said first refractory metal formed on said first refractory metal film,
• a second refractory metal film formed on said nitride film,
• a first aluminum alloy film formed on said second refractory metal film,
• an anti-reflection film possessing second connection holes at specified positions formed on said first aluminum alloy film,
• a second interlayer dielectric film layer possessing said second connection holes formed on said anti-reflection film,
• a third refractory metal film comprised of a single layer and formed in a specified region including said second connection holes,
• said third refractory metal film contacting said first aluminum alloy film at the bottom of said second connection holes, and
• a second aluminum alloy film formed on said third refractory metal film,
• wherein thickness of said third refractory metal film is 30 to 150 nm.