Semiconductor substrate with electrical contact in groove
AssigneeRicoh Company, Ltd.
InventorsToshifumi Asakawa, Daisuke Kosaka, Haruo Nakayama
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Abstract
A semiconductor substrate comprises a foundation, a semiconductor monocrystalline film formed on the foundation, and a high-melting-point metal film or a high-melting-point metal alloy film disposed in at least part of a region between the semiconductor monocrystalline film and the foundation. The high-melting-point metal film disposed below the semiconductor monocrystalline film can be utilized as a conductor in a semiconductor device.
Claims11
A semiconductor substrate comprising a foundation, a semiconductor monocrystalline film, and a high-melting-point metal film or a high-melting-point metal alloy film disposed on at least a part of said foundation,
- wherein said foundation comprises a dielectric body, and said semiconductor monocrystalline film comprises a silicon monocrystalline film formed over said at least a part of said foundation and formed into at least two regions isolated from each other by a groove containing an electrically conductive material spaced from each of said at least two regions, said groove having at least one side wall made of a dielectric film which extends to said foundation to thereby define a well, and said high-melting-point metal or said high-melting-point metal alloy extends into said groove and makes electrical contact with said electrically conductive material in the groove.
A solid state structure comprising:
- a foundation made of a dielectric material;
- a plurality of metal films made of an electrically conductive metal and disposed on said foundation so as to form a predetermined pattern thereof;
- a monocrystalline semiconductor film disposed on said metal films and an exposed portion of said foundation;
- a plurality of grooves formed in said monocrystalline semiconductor film in such a manner as to divide said monocrystalline semiconductor film into islands which are laterally spaced apart from each other, wherein each of said grooves extends down to an upper surface of said foundation, and said metal films are respectively included in some of said islands, and wherein each of said metal films extends and projects into a corresponding groove;
- dielectric films disposed on side walls of respective islands defining said grooves so that said islands are electrically isolated from each other;
- and
- a conductive material buried in each of grooves defined by said dielectric films so that an island including one of said metal films can be electrically connected to an outside of said structure through said one of said metal films.
Dependencies are inferred from the claim text.