Process for the preparation of a semiconductor from an oxalate
AssigneeHoechst Aktiengesellschaft
InventorWinfried Becker
Life of this patent
Estimating the term…
Loading patent…
AssigneeHoechst Aktiengesellschaft
InventorWinfried Becker
Estimating the term…
To prepare a phase-pure, ceramic oxide superconductor which contains, in addition to copper, at least one alkaline earth metal from the group comprising Ba, Sr and Ca, and at least one metal from the group comprising Y, La, Tl, Pb and the rare earths, for example of YBa.sub.2 Cu.sub.3 O.sub.7-x, a solution is prepared which contains the metal components in the atomic ratios of the superconductor. The metals are precipitated as oxalates by combining this solution with an oxalic acid solution, the mixture of the oxalates is separated off, dried and decomposed to form the oxides, and the latter are subsequently sintered at temperatures of from 700.degree. to 900.degree. C. in the presence of oxygen to form the superconductor. In this process, the heating of the metal oxalates and the oxides formed therefrom up to 700.degree. C. is carried out at a maximum oxygen partial pressure of 50 mbar, preferably in an inert gas.
A process for the preparation of a phase-pure, copper-containing, ceramic oxide superconductor which contains, in addition to copper, at least one alkaline earth metal selected from the group consisting of Ba, Sr, and Ca, and at least one metal selected from the group consisting of Y, La, Tl, Pb and the rare earths, in which a solution is prepared which contains the soluble salts of these metals in the atomic ratios of the superconductor, the metals are precipitated as oxalates by combining this solution with an oxalic acid solution, the mixture of the oxalates is separated off, dried and decomposed to form the oxides, and the latter are subsequently sintered at temperatures of from 700.degree. to 900.degree. C. in the presence of oxygen and converted into the superconductor, which comprises carrying out the heating of the metal oxalate at 200.degree. to 400.degree. C. in a gas atmosphere which has an O.sub.2 partial pressure of from 0 to 5 mbar, and carrying out the heating of the oxide-containing powder formed therefrom up to 700.degree. C. in a gas atmosphere having an oxygen partial pressure from 1 to 50 mbar.
Dependencies are inferred from the claim text.