Method and apparatus for material deposition
AssigneeSymetrix Corporation
InventorsLarry D. McMillan, Carlos A. Paz de Araujo, Tommy L. Roberts
Life of this patent
Estimating the term…
Abstract
A method and apparatus are disclosed for forming thin films of chemical compounds utilized in integrated circuits. The method includes steps of forming a precursor liquid comprising a chemical compound in a solvent, providing a substrate within a vacuum deposition chamber, producing a mist of the precursor liquid, and flowing the mist into the deposition chamber while maintaining the chamber at ambient temperature to deposit a layer of the precursor liquid on the substrate. The liquid is dried to form a thin film of a solid material on the substrate, then the integrated circuit is completed to include at least a portion of the film of solid material in a component of the integrated circuit.
Claims29
A method of fabricating an integrated circuit comprising the steps of:
- (a) providing a liquid precursor;
- (b) placing a substrate inside an enclosed deposition chamber;
- (c) producing a mist of said liquid precursor;
- (d) flowing said mist through said deposition chamber to form a layer of the precursor liquid on said substrate while maintaining said deposition chamber and said ..substrate at substantially ambient temperature;
- (e) treating the liquid layer deposited on the substrate to form a film of solid material;
- and
- (f) completing the fabrication of said integrated circuit to include at least a portion of said film of solid material in a component of said integrated circuit.
A method of fabricating an integrated circuit, said method comprising the steps of:
- (a) providing a liquid precursor;
- (b) placing a substrate inside an enclosed deposition chamber;
- (C) producing a mist of said liquid precursor;
- (d) flowing said mist into said deposition chamber to form a film on said substrate;
- (e) maintaining a vacuum in the deposition chamber during said step of flowing;
- (f) maintaining said deposition chamber and said substrate at substantially ambient temperature during said step of flowing;
- (g) treating the film deposited on the substrate to form a film of solid material;
- and
- (h) completing the fabrication of said integrated to include at least a portion of said film of solid material in a component of said integrated circuit.
A method of fabricating an integrated circuit, said method comprising the steps of:
- (a) providing a liquid precursor;
- (b) placing a substrate inside an enclosed deposition chamber;
- (C) producing a mist of said liquid precursor;
- (d) flowing said mist into said deposition chamber to form a film of the precursor liquid on said substrate while maintaining said substrate at ambient temperature;
- (e) treating the film deposited on the substrate to form a film of solid material;
- and
- (f) completing the fabrication of said integrated circuit to include at least a portion of said film of solid material in a component of said integrated circuit.
Dependencies are inferred from the claim text.