US 5,448,513 AGranted

Capacitorless DRAM device on silicon-on-insulator substrate

AssigneeThe Regents of the University of California

InventorsChenming Hu, Hsing-Jen Wann

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Abstract

A DRAM device has a first semiconductor region of one conductivity on the silicon film of a silicon-on-insulator substrate. A second and a third semiconductor region of the opposite conductivity type are formed in the first semiconductor region. A fourth semiconductor region of the same conductivity type as the first semiconductor region is formed within the second semiconductor region with higher doping concentration. An insulating layer is formed on the semiconductor surface. On top of the insulating layer, a gate electrode is formed and is at least partially overlapped with the first, the second, the third, and the fourth semiconductor region. A storage node is formed in the first semiconductor region between the second and the third semiconductor region where the information is stored. The amount of charge stored in the storage node is controlled by a first transistor including the fourth semiconductor region, the second semiconductor region, the storage node, and the gate electrode. The charge stored in the storage node will affect the characteristics of a second transistor including the third semiconductor region, the storage node, the second semiconductor region, and the gate electrode, thereby the information stored in the storage node is detected.

Claims10

Dependent claims

A capacitorless dynamic memory cell comprising a body including a support substrate, a first dielectric insulating layer on said substrate, and a semiconductor layer on said first dielectric insulating layer, said semiconductor layer having a surface,

a storage node in said semiconductor layer abutting said surface, and electrically isolated from said substrate by said first dielectric insulating layer, said storage node having a net dopant concentration of a first conductivity type,
a write bit line region abutting said surface and spaced from said storage node, said write bit line region having a net dopant concentration of said first conductivity type,
a buried word line region abutting said surface and positioned between and abutting said storage node and said write bit line region, said buried word line region having a net dopant concentration of a second conductivity type,
a read bit line region abutting said surface and said storage node opposite from said buried word line region, said read bit line region having a net dopant concentration of said second conductivity type,
a second dielectric insulating layer on said surface, and
a gate electrode on said second dielectric insulating layer positioned over said storage node and said buried word line region, said gate electrode functioning with said write bit line region, said buried word line region, and said storage node as a write transistor, and said gate electrode functioning with said buried word line region, said storage node, and said read bit line region as a read transistor.

3 more elements

A dynamic random access memory comprising an array of memory cells arranged in rows and columns, each memory cell comprising

a body including a supporting substrate, a first dielectric insulating layer on said substrate, and a semiconductor layer on said first dielectric insulating layer, said semiconductor layer having a surface,
a storage node in said semiconductor layer abutting said surface and electrically isolated from said substrate by said first dielectric insulating layer, said storage node having a net dopant concentration of a first conductivity type,
a write bit line region abutting said surface and spaced from said storage node, said write bit line region having a net dopant concentration of said first conductivity type,
a buried word line region abutting said surface and positioned between and abutting said storage node and said write bit line region, said buried word line region having a net dopant concentration of a second conductivity type,
a read bit line region abutting said surface and said storage node opposite from said buried word line region, said read bit line region having a net dopant concentration of said second conductivity type,
a second dielectric insulating layer on said surface, and
a gate electrode on said second dielectric insulating layer positioned over said storage node and said buried word line region, said gate electrode functioning with said write bit line region, said buried word line region, and said storage node as a write transistor, and said gate electrode functioning with said buried word line region, said storage node, and said read bit line region as a read transistor,
wherein said body of each memory cell comprises a portion of a common substrate.

5 more elements

Dependencies are inferred from the claim text.

Facts

Application: 08/161,734Filed 2 Dec 1993
Granted: 5 Sep 1995
Term ends: Not estimatedThe source records don’t support an estimate.

Classification9 codes

H10B 12/20
Dynamic random access memory [DRAM] devices: dRAM devices comprising floating-body transistors, e.g. floating-body cells
G11C 5/005
Details of stores covered by group G11C11/00: circuit means for protection against loss of information of semiconductor storage devices
G11C 11/405
With charge regeneration common to a multiplicity of memory cells, i.e. external refresh: with three charge-transfer gates, e.g. MOS transistors,…
H10B 12/00
Dynamic random access memory [dram] devices