Surface acoustic wave-semiconductor composite device

A surface acoustic wave-semiconductor composite device comprising:

• a piezoelectric plate;
• a semiconductor plate bonded directly to the piezoelectric plate by covalent or ionic bonds between oxygen atoms and component atoms of the piezoelectric plate and the semiconductor plate;
• input electrodes provided to apply a plurality of input signals to the piezoelectric plate, whereby surface acoustic waves are excited in the piezoelectric plate by applying the input signals;
• and
• an output electrode provided to detect a convolution output signal of a change in electric potential of the semiconductor plate at an interface of the semiconductor plate with the piezoelectric plate.

A surface acoustic wave-semiconductor composite device comprising:

• a piezoelectric plate;
• a semiconductor plate;
• an inorganic film applied to one of the piezoelectric plate and the semiconductor plate and bonded directly by hydrogen bonds between hydroxyl groups to the other of the piezoelectric plate and the semiconductor plate;
• input electrodes provided to apply a plurality of input signals to the piezoelectric plate, whereby surface acoustic waves are excited in the piezoelectric plate by applying the input signals;
• and
• an output electrode provided to detect a convolution output signal of a change in electric potential of the semiconductor plate at an interface of the semiconductor plate with the piezoelectric plate.

A surface acoustic wave-semiconductor composite device comprising:

• a piezoelectric plate;
• a semiconductor plate;
• an inorganic film applied to one of the piezoelectric plate and the semiconductor plate and bonded directly to the other of the piezoelectric plate and the semiconductor plate by covalent or ionic bonds between oxygen atoms and component atoms of the piezoelectric plate, the inorganic film and the semiconductor plate;
• input electrodes provided to apply a plurality of input signals to the piezoelectric plate, whereby surface acoustic waves are excited in the piezoelectric plate by applying the input signals;
• and
• an output electrode provided to detect a convolution output signal of a change in electric potential of the semiconductor plate at an interface of the semiconductor plate with the piezoelectric plate.

A surface acoustic wave-semiconductor composite device comprising:

• a piezoelectric plate;
• a semiconductor plate bonded directly to the piezoelectric plate by hydrogen bonds of hydroxyl groups, which semiconductor plate having a gap except portions bonded directly to the piezoelectric plate, which gap having a constant distance relative to the piezoelectric plate;
• input electrodes provided to apply a plurality of input signals to the piezoelectric plate, whereby surface acoustic waves are excited in the piezoelectric plate by applying the input signals;
• and
• an output electrode provided to detect a convolution output signal of a change in electric potential of the semiconductor plate at an interface of the semiconductor plate with the piezoelectric plate.

A surface acoustic wave-semiconductor composite device comprising:

• a piezoelectric plate;
• a semiconductor plate bonded directly to the piezoelectric plate by covalent or ionic bonds between oxygen atoms and component atoms of the piezoelectric plate and the semiconductor plate, which semiconductor plate having a gap except portions bonded directly to the piezoelectric plate, which gap having a constant distance relative to the piezoelectric plate;
• input electrodes provided to apply a plurality of input signals to the piezoelectric plate, whereby surface acoustic waves are excited in the piezoelectric plate by applying the input signals;
• and
• an output electrode provided to detect a convolution output signal of a change in electric potential of the semiconductor plate at an interface of the semiconductor plate with the piezoelectric plate.

A surface acoustic wave-semiconductor composite device comprising:

• a piezoelectric plate;
• a semiconductor plate;
• an inorganic film applied to one of the piezoelectric plate and the semiconductor plate and bonded directly to the other of the piezoelectric plate and the semiconductor plate by hydrogen bonds of hydroxyl groups, which inorganic film having a gap except portions bonded directly to the piezoelectric plate, which gap having a constant distance relative to the other of the piezoelectric plate and the semiconductor plate;
• input electrodes provided to apply a plurality of input signals to the piezoelectric plate, whereby surface acoustic waves are excited in the piezoelectric plate by applying the input signals;
• and
• an output electrode provided to detect a convolution output signal of a change in electric potential of the semiconductor plate at an interface of the semiconductor plate with the piezoelectric plate.

A surface acoustic wave-semiconductor composite device comprising:

• a piezoelectric plate;
• a semiconductor plate;
• an inorganic film applied to one of the piezoelectric plate and the semiconductor plate and bonded directly to the other of the piezoelectric plate and the semiconductor plate by covalent or ionic bonds between oxygen atoms and component atoms of the piezoelectric plate, the inorganic film and the semiconductor plate, which inorganic film having a gap except portions bonded directly to the piezoelectric plate, which gap having a constant distance relative to the other of the piezoelectric plate and the semiconductor plate;
• input electrodes provided to apply a plurality of input signals to the piezoelectric plate, whereby surface acoustic waves are excited in the piezoelectric plate by applying the input signals;
• and
• an output electrode provided to detect a convolution output signal of a change in electric potential of the semiconductor plate at an interface of the semiconductor plate with the piezoelectric plate.

A surface acoustic wave-semiconductor composite device comprising:

• a piezoelectric plate;
• a semiconductor plate;
• and
• an inorganic film applied to one of the piezoelectric plate and the semiconductor plate and bonded directly by hydrogen bonds between hydroxyl groups to the other of the piezoelectric plate and the semiconductor plate.

A surface acoustic wave-semiconductor composite device comprising:

• a piezoelectric plate;
• a semiconductor plate;
• and
• an inorganic film applied to one of the piezoelectric plate and the semiconductor plate and bonded directly to the other of the piezoelectric plate and the semiconductor plate by covalent or ionic bonds between oxygen atoms and component atoms of the piezoelectric plate, the inorganic film and the semiconductor plate.

A surface acoustic wave-semiconductor composite device comprising:

• a piezoelectric plate;
• a semiconductor plate;
• and
• an inorganic film applied to one of the piezoelectric plate and the semiconductor plate and bonded directly to the other of the piezoelectric plate and the semiconductor plate by hydrogen bonds between hydroxyl groups, which inorganic film having a gap except portions bonded directly to the piezoelectric plate, which gap having a constant distance relative to the other of the piezoelectric plate and the semiconductor plate.

A surface acoustic wave-semiconductor composite device comprising:

• a piezoelectric plate;
• a semiconductor plate;
• and
• an inorganic film applied to one of the piezoelectric plate and the semiconductor plate and bonded directly to the other of the piezoelectric plate and the semiconductor plate by covalent or ionic bonds between oxygen atoms and component atoms of the piezoelectric plate, the inorganic film and the semiconductor plate, which inorganic film having a gap except portions bonded directly to the piezoelectric plate, which gap having a constant distance relative to the other of the piezoelectric plate and the semiconductor plate.