Ultra-fast detectors using doped nanocrystal insulators

A solid-state X-ray detector comprising:

• (a) a layer of doped nanocrystals of a high Z material doped with an activator,
• (b) said doped nanocrystals having an energy band structure due to quantum confinement and producing excited carriers in response to incident X-rays,
• (c) said activator having atomic energy levels such that excited carriers can transfer to said atomic energy levels and upon recombination will generate visible photons,
• (d) a visible light detector means for detecting the photons generated by the activator.

An X-ray imaging device comprising:

• (a) an X-ray beam source comprising macropulses each comprising short micropulses in the picosec. range,
• (b) an object to be imaged in the beam path, each point of the object scattering the X-ray micropulses,
• (c) a solid state screen positioned to intercept the scattered micropulses, said screen comprising a layer of doped nanocrystals of a high Z material doped with an activator, said doped nanocrystals having an energy band structure due to quantum confinement and producing excited carriers in response to incident X-rays, said activator having atomic energy levels such that excited carriers can transfer to said atomic energy levels and upon recombination will emit visible photons,
• (d) means for detecting the photons and for determining the screen locations where photons are emitted.

A solid-state sensor comprising:

• (a) a layer comprising doped nanocrystals doped with an activator,
• (b) said doped nanocrystals having an energy band structure due to quantum confinement,
• (c) said activator having atomic energy levels such that excited carriers can transfer to said atomic energy levels and upon recombination will generate visible photons,
• (d) means for detecting the photons generated by the activator,
• (e) said doped nanocrystals creating excited carriers in response to UV, X-rays, pressure, heat, or an electric field.