Vertical bloch line memory
AssigneeCalifornia Institute of Technology
InventorsRomney R. Katti, Henry L. Stadler, Jiin-chuan Wu
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AssigneeCalifornia Institute of Technology
InventorsRomney R. Katti, Henry L. Stadler, Jiin-chuan Wu
Estimating the term…
A new read gate design for the vertical Bloch line (VBL) memory is disclosed which offers larger operating margin than the existing read gate designs. In the existing read gate designs, a current is applied to all the stripes. The stripes that contain a VBL pair are chopped, while the stripes that do not contain a VBL pair are not chopped. The information is then detected by inspecting the presence or absence of the bubble. The margin of the chopping current amplitude is very small, and sometimes non-existent. A new method of reading Vertical Bloch Line memory is also disclosed. Instead of using the wall chirality to separate the two binary states, the spatial deflection of the stripe head is used. Also disclosed herein is a compact memory which uses vertical Bloch line (VBL) memory technology for providing data storage. A three-dimensional arrangement in the form of stacks of VBL memory layers is used to achieve high volumetric storage density. High data transfer rate is achieved by operating all the layers in parallel. Using Hall effect sensing, and optical sensing via the Faraday effect to access the data from within the three-dimensional packages, an even higher data transfer rate can be achieved due to parallel operation within each layer.
An improved data readback device for a vertical Bloch line (VBL) memory system of the type having a plurality of stripes, some of such stripes having a VBL pair representing a binary "1" and some of such stripes not having such a VBL pair, the absence of a VBL pair representing a binary "0";
A method for improving the reliability of readback in VBL memory system of the type having a plurality of stripes, some of such stripes having a VBL pair representing a binary "1" and some of such stripes not having such a VBL pair, the absence of a VBL pair representing a binary "0";
A method of reading data in a VBL memory system, the system of the type having a plurality of stripes in grooves of a magnetic material subjected to a bias magnetic field and further having a stripe expansion conductor adjacent an end of each such stripe and a first chopping conductor connected to a major line for propagating bubbles in said VBL memory system, the first chopping conductor being adjacent the expansion conductor for chopping an expanded stripe head in each said stripe for transferring a bubble onto the major line for determining whether a VBL pair is contained within such bubble, the presence or absence of a VBL pair being determinative of whether the corresponding stripe stored a binary "1" or "0", respectively;
Dependencies are inferred from the claim text.