High temperature photodetector array

Abstract

An optical detection system includes an array of photodetectors, each of which is positioned for receiving light and converting the light into an electrical signal. A plurality of high pass filters is positioned with each one of the high pass filters electrically coupled to a respective photodetector for passing a portion of a respective electrical signal having frequency components at least as high as the high pass filter cutoff frequency. In one embodiment, each one of the filters comprises a capacitance coupled to the photodetector and a depletion mode FET with shorted gate-to-source terminals coupled between the photodetector and a bias voltage source. Each of the FETs comprises a silicon substrate, a silicon dioxide first insulative layer having a trench and a first conductive layer covering a portion of the first insulative layer including a portion of the trench, and each of the capacitances comprises the first conductive layer, a second insulative layer covering a portion of the first conductive layer, and a second conductive layer covering a portion of the second insulative layer.

Dependencies are inferred from the claim text.