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US 5,432,808 AGranted
Compound semicondutor light-emitting device
AssigneeKabushiki Kaisha Toshiba
InventorsAko Hatano, Yasuo Ohba
Life of this patent
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Abstract
A compound semiconductor light-emitting device includes a cubic SiC substrate, and an Ga.sub.x Al.sub.y In.sub.1-x-y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) layer formed on the (111) surface of the cubic-crystal SiC substrate. The surface of the Ga.sub.x Al.sub.y In.sub.1-x-y N layer, which opposes the substrate, is an N surface, and the light-emitting device has a pn junction.
Claims20
A compound semiconductor device comprising:
- a cubic SiC substrate;
- and
- a Ga.sub.x Al.sub.y In.sub.1-x-y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) layer formed on a (111) surface of said cubic SiC substrate.
A compound semiconductor device having a pn junction, comprising:
- a substrate;
- and
- a Ga.sub.x Al.sub.y In.sub.1-x-y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) layer formed on said substrate,
- wherein a crystal face of said Ga.sub.x Al.sub.y In.sub.1-x-y N layer opposing said substrate is an N surface.
1 more element
A compound semiconductor device comprising:
- a p-type conductive substrate;
- a p-type Ga.sub.x Al.sub.y In.sub.1-x-y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) layer formed on said substrate, and
- an n-type Ga.sub.x Al.sub.y In.sub.1-x-y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) layer formed on said p-type Ga.sub.x Al.sub.y In.sub.1-x-y N layer.
Dependencies are inferred from the claim text.