Thermoelectric element sheet in which thermoelectric semiconductors are mounted between films

A thermoelectric refrigeration system, comprising:

• a thermoelectric element sheet which includes at least two layered structures having a plurality of thermoelectric elements which are arranged between surface-insulated metal films,
• wherein each thermoelectric element includes a plurality of structural units having a pair of thermoelectric semiconductors with a predetermined thermal-flow length and an electrode connecting said thermoelectric semiconductors,
• wherein each thermoelectric element further includes a plurality of electrodes connecting said structural units, and
• wherein each of said surface-insulated metal films consists of a metal layer covered with an insulation layer.

A thermoelectric generation system, comprising

• a thermoelectric element sheet which includes at least two layered structures having a plurality of thermoelectric elements which are arranged between surface-insulated metal films,
• wherein each thermoelectric element includes a plurality of structural units having a pair of thermoelectric semiconductors with a predetermined thermal-flow length and an electrode connecting said thermoelectric semiconductors,
• wherein each thermoelectric unit further includes a plurality of electrodes connecting said structural units, and
• wherein each of said surface-insulated metal films consists of a metal layer covered with an insulation layer.

A thermoelectric element sheet, comprising:

• at least two layered structures having a plurality of thermoelectric elements which are arranged between surface-insulated metal films,
• wherein each thermoelectric element includes a plurality of structural units and a plurality of electrodes connecting said structural units,
• wherein each structural unit has a pair of thermoelectric semiconductors with a predetermined thermal-flow length and an electrode connecting said thermoelectric semiconductors,
• wherein said electrodes connecting said thermoelectric semiconductors of said structural units are arranged so as to keep their contacts with said thermoelectric semiconductors when said thermoelectric element sheet is bent, and consists of a metal layer covered with an insulation layer.

A thermoelectric element sheet, comprising:

• a plurality of pairs of thermoelectric semiconductors;
• a surface-insulated metal film, said surface-insulated metal film consisting of a metal layer covered with an insulation layer;
• electrode means on the film for electrically connecting the thermoelectric semiconductors of each pair to one another;
• a further surface-insulated metal film, said further surface-insulated metal film consisting of a metal thermoelectric semiconductors being disposed between the film and the further film;
• and
• further electrode means on the further film for electrically connecting thermoelectric semiconductors in adjacent pairs to one another, the further electrode means including
• first electrodes that are disposed in a first line at predetermined intervals, and
• second electrodes that are disposed in a second line at the same predetermined intervals, the second line being parallel to the first line, the second electrodes being offset from the first electrodes so that the first and second electrodes do not lie in columns which are perpendicular to the first and second lines.

A thermoelectric element sheet, comprising:

• at least two layered structures having a plurality of thermoelectric elements which are arranged between surface-insulated metal films,
• wherein each thermoelectric element includes a plurality of structural units and a plurality of electrodes connecting said structural units,
• wherein each structural unit has a pair of thermoelectric semiconductors with a predetermined thermal-flow length and an electrode connecting said thermoelectric semiconductors, and
• wherein said surface-insulated metal films include at least
• a first film having a first insulated surface on which are arranged said electrodes connecting said thermoelectric semiconductors of the structural units of a respective one of said thermoelectric elements;
• and
• a second film having a second insulated surface on which are arranged said electrodes connecting said structural units of said respective one of said thermoelectric elements, said first and second insulated surfaces facing each other;
• and
• additional electrodes that are arranged on said first insulating surface, the electrodes arranged on said first insulating surface being disposed at intervals to form a plurality of parallel lines in a predetermined direction, with electrodes in adjacent lines being offset from each other, the electrodes in each line on said first insulating surface being arranged in the direction of the respective line so as to satisfy the inequality
• A<C<B
• where "A" is the distance between the pair of thermoelectric semiconductors in each structural unit,
• "B" is the distance between adjacent structural units, and
• "C" is the length of the electrodes arranged on said first insulating surface.

A thermoelectric element sheet, comprising:

• at least two layered structures having a plurality of thermoelectric elements which are arranged between insulating films,
• wherein each thermoelectric element includes a plurality of structural units and a plurality of electrodes connecting said structural units,
• wherein each structural unit has a pair of thermoelectric semiconductors with a predetermined thermal-flow length and an electrode connecting said thermoelectric semiconductors,
• wherein said electrodes connecting said thermoelectric semiconductors of said structural units are arranged so as to keep their contacts with said thermoelectric semiconductors when said thermoelectric element sheet is bent, the electrodes connecting the thermoelectric semiconductors of the structural units of one of the thermoelectric elements being arranged on one of the insulating films along with a plurality of additional electrodes, the electrodes arranged on said one of the insulating films being disposed at intervals and forming a plurality of parallel lines which extend in a predetermined direction, with electrodes in adjacent lines being offset from each other, the electrodes in each line on said one of the insulating films being arranged in the direction of the respective line so as to satisfy the inequality
• A<C<B
• where "A" is the distance between the pair of thermoelectric semiconductors in each structural unit,
• "B" is the distance between adjacent structural units, and
• "C" is the length of the electrodes arranged on said one of the insulating films.

A thermoelectric element sheet, comprising:

• a plurality of pairs of thermoelectric semiconductors;
• a film;
• electrode means on the film for electrically connecting the thermoelectric semiconductors of each pair to one another;
• a further film, the pairs of thermoelectric semiconductors being disposed between the film and the further film;
• and
• further electrode means on the further film for electrically connecting thermoelectric semiconductors in adjacent pairs to one another, the further electrode means including
• first electrodes that are disposed in a first line at predetermined intervals,
• second electrodes that are disposed in a second line at the same predetermined intervals, the second line being parallel to the first line, the second electrodes being offset from the first electrodes so that the first and second electrodes do not lie in columns which are perpendicular to the first and second lines, and
• third electrodes that are disposed in a third line at the same predetermined intervals, the third line being parallel to the first and second lines, the third electrodes being offset from the second electrodes so that the second and third electrodes do not lie in columns which are perpendicular to the second and third lines, the third electrodes additionally being offset from the first electrodes so that the first and third electrodes do not lie in columns which are perpendicular to the first and third lines.