Dielectric deposition and cleaning process for improved gap filling and device planarization
AssigneeIntel Corporation
InventorFarhad K. Moghadam
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Abstract
A method of forming a silicon dioxide layer (SiO.sub.2) on a semiconductor substrate which fills gaps between surface features by means of applying, cleaning, and etching a series of layers of silicon dioxide. A layer of SiO.sub.2 is deposited by plasma enhanced chemical vapor deposition of tetraethyl orthosilicate; and a second layer of SiO.sub.2 is deposited thereon by thermal chemical vapor deposition. A series of etches are performed, removing the second layer of SiO.sub.2 from all regions of the substrates except the gaps. A third layer of SiO.sub.2, formed by plasma enhanced chemical vapor deposition, is then deposited. An additional etch step further planarizes the surface of the substrate.
Claims28
A process for forming a dielectric layer on a semiconductor surface, said surface having structures formed thereon, said structures having gaps formed therebetween, said process comprising the steps of:
- depositing a first layer of silicon dioxide by PECVD TEOS;
- depositing a second layer of silicon dioxide by THCVD TEOS;
- etching said second layer of silicon dioxide from all regions of said dielectric layer in which openings are to be formed while leaving at least some of said second layer in said gaps to form an etched surface;
- and
- depositing a third layer of silicon dioxide formed by PECVD TEOS on said etched surface.
In a process for depositing silicon dioxide on a semiconductor substrate, said process having at least one deposition of silicon dioxide formed by PECVD TEOS, an improvement comprising a plasma clean step after deposition of said SiO.sub.2 layer formed by PECVD TEOS.
A process for forming a dielectric layer on a semiconductor substrate, said substrate having structures formed thereon, said structures having gaps formed therebetween, said process comprising the steps of:
- depositing a first layer of silicon dioxide by PECVD TEOS;
- depositing a second layer of silicon dioxide by THCVD TEOS;
- etching said second layer of silicon dioxide from all areas of said semiconductor substrate except said gaps;
- depositing a third layer of silicon dioxide foraged by PECVD TEOS on said etched surface.
Dependencies are inferred from the claim text.