Photo-plating solution and process
AssigneeKabushiki Kaisha Toyota Chuo Kenkyusho
InventorShinya Morishita
Life of this patent
Estimating the term…
Abstract
An electroless metal or alloy plating solution as a photo-plating solution contains at least one of copper, nickel, cobalt or tin, and a sacrificial reagent which supplies electrons as a result of irreversible oxidative decomposition. A semiconductor is supported on a substrate, and dipped in the photo-plating solution, and the surface of the semiconductor is irradiated with light having a higher level of energy than the exciting energy of the semiconductor. A thick coating containing at least one of copper, nickel, cobalt or tin can be formed on that portion of the semiconductor which has been irradiated with light.
Claims5
A process for photo-plating a semiconductor which comprises the steps of
- supporting a semiconductor on a substrate,
- immersing said semiconductor in an electroless metal or alloy plating solution which comprises at least one metal or at least one alloy thereof, said at least one metal being selected from the group consisting of copper, nickel, cobalt and tin, and a sacrificial reagent for supplying electrons by irreversible oxidative decomposition, wherein said sacrificial reagent comprises a substance serving also as a complexing agent to stabilize ions of said at least one metal in said electroless plating solution and which comprises at least one compound selected from the group consisting of amines, imines, alkanolamines, hydroxycarboxylic acids and aminocarboxylic acids, and
- irradiating the surface of said semiconductor with light having a higher level of energy than the exciting energy of said semiconductor;
- wherein said process forms a film of 10.mu. to several tens of .mu.m.
Dependencies are inferred from the claim text.