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AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHongyong Zhang, Shunpei Yamazaki, Yasuhiko Takemura
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A process for laser processing an article, which comprises: heating the intended article to be doped with an impurity to a temperature not higher than the melting point thereof, said article being made from a material selected from a semiconductor, a metal, an insulator, and a combination thereof; and irradiating a laser beam to the article in a reactive gas atmosphere containing said impurity, thereby allowing the impurity to physically or chemically diffuse into, combine with, or intrude into said article. The present invention also provides an apparatus for use in a laser processing process, characterized by that it is provided with an internal sample holder and a device which functions as a heating means of the sample, a window made of a material sufficiently transparent to transmit a laser beam, a chamber comprising a vacuum evacuation device and a device for introducing a reactive gas containing an impurity element, a laser apparatus operating in a pulsed mode to irradiate a laser beam to said chamber, and a means to move said chamber synchronously with the laser irradiation.
A process for doping a semiconductor with an impurity which renders the semiconductor either N-conductive or P-conductive, said process comprising irradiating a laser beam to the surface of said semiconductor in a gas atmosphere containing said impurity, wherein,
A process for doping a semiconductor with an impurity which renders the semiconductor either N-conductive or P-conductive, said process comprising irradiating a laser beam to the surface of said semiconductor in a gas atmosphere containing said impurity, wherein,
A process for doping a silicon oxide coating prepared by vapor phase reaction using organosilane gas as the starting material at a substrate temperature of 600.degree. C. or lower, said process comprising irradiating a laser beam to the surface of said silicon oxide coating in a gas atmosphere containing phosphorus.
A method for forming a semiconductor device comprising the steps of:
A method for forming a semiconductor device comprising the steps of:
Dependencies are inferred from the claim text.