Process for fabricating materials for ferroelectric, high dielectric constant, and integrated circuit applications

A method of fabricating an integrated circuit comprising the steps of:

• providing an integrated circuit wafer and a precursor comprising titanium 2-methoxyethoxide;
• applying said precursor to said integrated circuit wafer;
• heating said integrated circuit wafer to form a layer of a titanium compound on said integrated circuit wafer;
• and
• completing the fabrication of said integrated circuit wafer to form a plurality of interconnected electrical devices on said wafer.

A method of fabricating an integrated circuit comprising the steps of:

• providing an integrated circuit wafer, a support, and a precursor comprising a metal carboxylate in a solvent, said solvent having a boiling point between 110.degree. C. and 170.degree. C. and selected from the group comprising xylenes, 2-methoxyethanol, and n-butyl acetate;
• applying said precursor to said support to form a sputtering target;
• sputtering said target to form a layer of a chemical compound of said metal on said integrated circuit wafer;
• and
• completing the fabrication of said integrated circuit wafer to form a plurality of interconnected electrical devices on said wafer.