Semiconductor device with high heat conductivity
AssigneeMotorola, Inc.
InventorsMichael S. Lebby, Chan-Long Shieh, Ken Davis
Life of this patent
Estimating the term…
Abstract
A VCSEL having a first mirror stack positioned on the surface of a substrate, an active region positioned on the first mirror stack and substantially coextensive therewith, and a second mirror stack positioned on the active region, the second mirror stack forming a ridge or mesa having a side surface. A metal contact layer is positioned on the side surface of the ridge or mesa and on portions of an end of the ridge or mesa to define a light emitting area, and a layer of diamond-like material is electrolytically plated on the metal contact layer so as to form a heat conductor to remove heat from the laser.
Claims5
A vertical cavity surface emitting laser with high heat conductivity comprising:
- a supporting substrate having a surface lying in a first plane;
- a first mirror stack positioned on the surface of the substrate;
- an active region including at least an active layer positioned parallel and in overlying abutting engagement with the first mirror stack and substantially coextensive therewith;
- a second mirror stack positioned parallel and in overlying abutting engagement with the active region, the second stack of mirrors forming a ridge or mesa having a side surface;
- a metal contact layer positioned on the side surface of the ridge or mesa and on portions of an end of the ridge or mesa to define a light emitting area;
- and
- a layer of diamond-like material substantially covering the metal contact layer and forming a heat conductor to remove heat from the laser.
Dependencies are inferred from the claim text.