US 5,417,770 A · Photovoltaic device and a forming method thereof

Abstract

A method of quickly depositing a non-single-crystal semiconductor film and forming a silicon-type non-single-crystal photovoltaic device, and a method of continuously manufacturing the photovoltaic devices. By this method the deposited film is formed by decomposing a raw material gas with microwave energy which is lower than the microwave energy required to completely decompose the raw material gas. RF energy is applied at the same time which is higher in energy than the microwave energy. The microwave energy acts on the raw material gas at an internal pressure level of 50 mTorr or lower to form a uniform non-single-crystal semiconductor film with excellent electrical characteristics and reduced light deterioration.

Claims28

Dependent claims

A method of forming a deposited film on a substrate by decomposing a raw material gas with microwave energy, said method comprising the steps of:

selecting the raw material gas;
disposing the substrate in a deposition chamber;
setting an internal pressure level of said chamber of 50 mTorr or lower;
introducing to said chamber microwave energy which is lower than the microwave energy required to completely decompose said raw material gas and RF energy which is higher than said microwave energy;
causing said microwave energy and said RF energy to act on said raw material gas, thereby forming said deposited film on the substrate.

2 more elements

A method of continuously manufacturing photovoltaic devices, comprising the steps of:

causing an elongated substrate member to sequentially pass through a plurality of film-forming spaces while continuously moving said elongated member in a longitudinal direction thereof;
forming a first-conductivity type non-single crystal layer containing Si atoms on said elongated substrate member by high frequency glow discharge in one of said plurality of film-forming spaces at a pressure of at least 100 mTorr;
forming an i-type non-single-crystal layer containing Si atoms on said elongated substrate member by microwave glow discharge of a raw material gas in another one of said plurality of film-forming spaces at a pressure of no more than 50 mTorr, wherein microwave energy which is lower than that required to completely decompose said raw material gas and RF energy greater than said microwave energy is applied to said another film-forming space;
forming a second-conductivity-type non-single-crystal layer containing Si atoms on said elongated substrate member by high frequency glow discharge in yet another one of said plurality of film-forming spaces at a pressure of at least 100 mTorr;
and
sequentially stacking, on said elongated substrate member, at least said first-conductivity-type non-single crystal layer, said i-type non-single-crystal layer, and said second conductivity-type non-single-crystal layer.

3 more elements

Dependencies are inferred from the claim text.

Photovoltaic device and a forming method thereof

Life of this patent

Photovoltaic device and a forming method thereof

Life of this patent

Abstract

Claims28