Netoresistance effect element
AssigneeKabushiki Kaisha Toshiba
InventorsYuzo Kamiguchi, Atsuhito Sawabe, Masashi Sahashi, Hitoshi Iwasaki
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Abstract
A magnetoresistance effect element is prepared by successively forming one upon the other a first magnetic layer, a P- or N-type semiconductor layer, a second magnetic layer, and a magnetization fixing layer in this order on an insulating substrate. A Schottky junction is formed between the first magnetic layer and the semiconductor layer and between the semiconductor layer and the second magnetic layer. The relative angle between the magnetization direction within the first magnetic layer and the magnetization direction within the second magnetic layer is changed depending on the intensity of the magnetic field, leading to a change in the tunnel conductance.
Claims19
A magnetoresistance effect element, comprising a first magnetic layer, a second magnetic layer, and a P- or N-type semiconductor layer interposed between said first and second magnetic layers, wherein junctions are formed between said first magnetic layer and said semiconductor layer and between said semiconductor layer and said second magnetic layer.
A magnetoresistance effect element, comprising a first magnetic layer, a second magnetic layer, and a semiconductor layer interposed between said first and second magnetic layers, said semiconductor layer including a first layer of a first conductivity type and a second layer of a second conductivity type, a junction being formed therebetween, and wherein junctions are formed between said first magnetic layer and said first layer and between said second magnetic layer and said second layer.
A magnetoresistance effect element, comprising a first magnetic layer, a first semiconductor layer of a first conductivity type formed on said first magnetic layer, a second semiconductor layer of a second conductivity type formed on said first semiconductor layer, a second magnetic layer formed on said second semiconductor layer, and a third semiconductor layer of said second conductivity type formed on said first semiconductor layer, wherein junctions are formed between said first magnetic layer and said first semiconductor layer, between said first semiconductor layer and said second semiconductor layer, between said second semiconductor layer and said second magnetic layer, and between said first semiconductor layer and said third semiconductor layer.
Dependencies are inferred from the claim text.