Sputtering target

A method of manufacturing an alloy target for sputtering which comprises the steps of

• charging raw material powders into a mill, said raw material powders having average particle diameters of 1 to 100 .mu.m,
• mixing and pulverizing said raw material powders in said mill to produce an alloy powder by mechanical alloying, and
• sintering under pressurization the alloy powder obtained by subjecting said alloy powder to hot pressing at a temperature of 900.degree. to 1500.degree. C. to form a sintered body from which said alloy target is manufactured.

A method of manufacturing a W--Ti alloy target for sputtering which comprises the steps of

• charging raw material powders consisting of 80 to 99 wt % W and 1 to 20 wt % Ti into a mill, said raw material W and Ti powders having average particle diameters of 1 to 100 .mu.m,
• mixing and pulverizing said raw material powders in said mill to produce a W--Ti alloy powder by mechanical alloying, and
• sintering under pressurization the W--Ti alloy powder obtained to form a sintered body from which said W--Ti alloy target is manufactured.

A method of manufacturing a W--Ti alloy target for sputtering which comprises the steps of

• charging raw material powders consisting of 80 to 99 wt % W and 1 to 20 wt % Ti into a mill, said raw material W and Ti powders having an average particle diameters of 1 to 100 .mu.m,
• mixing and pulverizing said raw material powders in said mill to produce W--Ti alloy powder by mechanical alloying, and
• sintering under pressurization the W--Ti alloy powder obtained by subjecting it to hot pressing at a temperature of 900.degree. to 1500.degree. C. to form a sintered body from which said W--Ti alloy target is manufactured.

A method of manufacturing a metal silicide target for sputtering, which comprises the steps of

• mechanically alloying silicon and a metal in a silicon/metal molar ratio of 2.0 or more to produce a metal silicide powder which consists of secondary particles 10 .mu.m or larger in particle size as aggregates of primary particles 5 .mu.m or smaller in size;
• and
• hot pressing the resulting metal silicide powder,

A method of manufacturing a metal silicide target for sputtering comprising a high melting point metal silicide having a melting point in excess of 1,000.degree. C., which method comprises the steps of

• mechanically alloying a metal and silicon to produce a metal silicide powder having a particle size of 10 .mu.m or more;
• and
• hot pressing the metal silicide powder at a temperature of between 900.degree. and 1400.degree. C.

A method of manufacturing a metal silicide target for sputtering comprising a metal silicide having a melting point of 1,000.degree. C. or below, which method comprises the steps of

• mechanically alloying a metal and silicon to produce a metal silicide powder having a particle size of 10 .mu.m or more;
• and
• hot pressing the metal silicide powder at a temperature of between 500.degree. and 950.degree. C.