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US 5,413,967 AGranted
Method of manufacturing semiconductor devices
AssigneeKabushiki Kaisha Toshiba
InventorsTetsuo Matsuda, Haruo Okano
Life of this patent
Estimating the term…
Abstract
An organic silane compound gas and an oxidizing gas are introduced into a reaction vessel from each gas source. Further a gas containing at least one kind of halogen, for example carbon tetrafluoride, is decomposed into halogen radicals, etc., by microwave discharge, and introduced into the reaction vessel. Reaction occurs between the gases, resulting in silicon oxide films being formed on substrates in the reaction vessel.
Claims11
A method of manufacturing semiconductor devices, comprising the steps of:
- arranging at least one substrate in a reaction vessel;
- decomposing a gas including at least one halogen into halogen radicals;
- supplying an organic silane compound gas, an ozone gas, and said gas including at least one halogen decomposed into halogen radicals into said reaction vessel;
- and
- forming a silicon oxide film, including said at least one halogen, on said substrate by heating an inner portion of said reaction vessel to a predetermined temperature, while decreasing exhausted products to levels at which reliability of said silicon oxide film is not impaired.
2 more elements
A method of manufacturing semiconductor devices, comprising the steps of:
- arranging at least one substrate in a reaction vessel;
- decomposing a gas including at least one halogen into halogen radicals;
- supplying an organic silane compound gas, an ozone gas, and said gas including at least one halogen decomposed into halogen radicals to said reaction vessel;
- forming a silicon oxide film, including said at least one halogen, on said substrate by heating an inner portion of said reaction vessel to a predetermined temperature, while decreasing exhausted products to levels at which reliability of said silicon oxide film is not impaired;
- and
- forming a conductive layer on said silicon oxide film.
3 more elements
Dependencies are inferred from the claim text.