Noise filter having non-linear voltage-dependent resistor body with a resistive layer

A noise filter comprising:

• semiconductor ceramics having a pair of end surfaces opposed to each other and a pair of side surfaces connecting said pair of end surfaces;
• end surface electrodes respectively formed on said end surfaces of said semiconductor ceramics;
• at least one side surface electrode formed on said side surfaces of said semiconductor ceramics;
• a first inner electrode formed inside said semiconductor ceramics and electrically connected to one of said end surface electrodes;
• a second inner electrode formed inside said semiconductor ceramics so as to be overlapped with the first inner electrode while being separated from the first inner electrode by a semiconductor ceramic layer,
• said second inner electrode being electrically connected to said side surface electrode;
• and
• a resistance layer formed inside said semiconductor ceramics and electrically connected between said end surface electrodes,
• wherein said resistance layer is made of a material having 60% by weight of Pb.sub.2 Ru.sub.2 O.sub.7 or Bi.sub.2 Ru.sub.2 O.sub.7 added to RuO.sub.2.

A noise filter comprising:

• semiconductor ceramics having a pair of end surfaces opposed to each other and a pair of side surfaces connecting said pair of end surfaces;
• end surface electrodes respectively formed on said end surfaces of said semiconductor ceramics;
• at least one side surface electrode formed on said side surfaces of said semiconductor ceramics;
• a first inner electrode formed inside said semiconductor ceramics and electrically connected to one of said end surface electrodes;
• a second inner electrode formed inside said semiconductor ceramics so as to be overlapped with the first inner electrode while being separated from the first inner electrode by a semiconductor ceramic layer,
• said second inner electrode being electrically connected to said side surface electrode;
• and
• a resistance layer formed inside said semiconductor ceramics and electrically connected between said end surface electrodes,
• wherein said resistance layer is made of a material having 60% by weight of Pb.sub.2 Ru.sub.2 O.sub.7 and Bi.sub.2 Ru.sub.2 O.sub.7 added to RuO.sub.2.

A noise filter for receiving an input voltage pulse having a predetermined high level and outputting an output voltage which is less than a predetermined lower level, the noise filter comprising:

• (A) a varistor including:
• semiconductor ceramics having a pair of end surfaces opposed to each other and a pair of side surfaces connecting said pair of end surfaces;
• first and second end surface electrodes respectively formed on said end surfaces of said semiconductor ceramics for receiving said input voltage and outputting said output voltage, respectively;
• at least one side surface electrode formed on a side surface of said semiconductor ceramics;
• a first inner electrode formed inside said semiconductor ceramics and electrically connected to said first end surface electrode;
• and
• a second inner electrode formed inside said semiconductor ceramics so as to be overlapped with the first inner electrode while being separated from the first inner electrode by a semiconductor ceramic layer,
• said second inner electrode being electrically connected to said side surface electrode;
• and
• (B) a resistance layer formed inside said semiconductor ceramics as a separate layer from said first and second inner electrodes of said varistor and electrically connected between said first and second end surface electrodes to absorb overvoltage in excess of the voltage restrained by said varistor.

A noise filter for receiving an input voltage pulse having a predetermined high level and outputting an output voltage which is less than a predetermined lower level, the noise filter comprising:

• (A) a varistor including:
• semiconductor ceramics having a pair of end surfaces opposed to each other and a pair of side surfaces connecting said pair of end surfaces;
• first and second end surface electrodes respectively formed on said end surfaces of said semiconductor ceramics for receiving said input voltage and outputting said output voltage, respectively;
• at least one side surface electrode formed on a side surface of said semiconductor ceramics;
• a first inner electrode formed inside said semiconductor ceramics and electrically connected to said first end surface electrode;
• and
• a second inner electrode formed inside said semiconductor ceramics so as to be overlapped with the first inner electrode while being separated from the first inner electrode by a semiconductor ceramic layer,
• said second inner electrode being electrically connected to said side surface electrode;
• and
• (B) a resistance layer having a resistivity that is higher than a resistivity of said first and second inner electrodes, said resistance layer being formed inside said semiconductor ceramics as a separate layer from said first and second inner electrodes of said varistor and electrically connected between said first and second end surface electrodes,
• said resistance layer providing a voltage drop between said first and second end surface electrodes in response to an input voltage pulse of said predetermined high level such that voltage at said second end surface electrode is less than said predetermined lower level.