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US 5,404,027 AGranted
Buried ridge II-VI laser diode
AssigneeMinnesota Mining & Manufacturing Compay
InventorsMichael A. Haase, Jun Qiu, Hwa Cheng, James M. DePuydt
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Abstract
A buried-ridge or buried-heterostructure II-VI laser diode. Polycrystalline II-VI semiconductor such as ZnS, ZnSSe, ZnSe or CdS deposited by vacuum evaporation buries the etched ridge.
Claims34
A II-VI compound semiconductor laser diode, including:
- a first guiding layer of II-VI semiconductor of a first conductivity type;
- a second guiding layer of II-VI semiconductor of a second conductivity type adjacent to the first guiding layer,
- the first and second guiding layers forming a pn junction;
- an active layer of II-VI semiconductor adjacent to the pn junction;
- a semiconductor substrate of the first conductivity type opposite the first guiding layer from the second guiding layer;
- a ridge formed in at least one of the layers of II-VI semiconductor;
- a burying layer of II-VI semiconductor on opposite sides of the ridge, forming a buried-ridge waveguide for lateral optical and current confinement;
- a first electrode opposite the substrate from the first guiding layer;
- and
- a second electrode opposite the ridge from the substrate.
7 more elements
A II-VI compound semiconductor laser diode including:
- a plurality of layers of II-VI semiconductor, including at least a first guiding layer, forming a pn junction;
- an active layer of II-VI semiconductor within the pn junction;
- a semiconductor substrate for supporting the layers of II-VI semiconductor;
- a ridge formed in at least one of the layers of II-VI semiconductor;
- a burying layer of II-VI semiconductor on opposite sides of the ridge, forming a buried-ridge waveguide for lateral optical and current confinement;
- and
- first and second electrodes for coupling electrical energy to the laser diode.
4 more elements
Dependencies are inferred from the claim text.