Method for producing a light emitting diode having transparent substrate
AssigneeSharp Kabushiki Kaisha
InventorsMasanori Watanabe, Haruhisa Takiguchi
Life of this patent
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Abstract
A method for producing a light emitting diode includes the steps of: forming a first semiconductor multilayer on a first semiconductor substrate having a first conductivity type; forming a light emitting layer on the first semiconductor multilayer; forming a second semiconductor multilayer; disposing a second substrate which is transparent to light emitted from the light emitting layer on the second semiconductor multilayer; and bonding the second substrate and the second semiconductor multilayer through direct bonding with heating a vicinity of an interface between the second substrate and the second semiconductor multilayer.
Claims17
A method for producing a light emitting diode, the method comprising the steps of:
- epitaxially growing a first semiconductor multilayer on a first semiconductor substrate having a first conductivity type, the first semiconductor multilayer including at least one first semiconductor layer having the first conductivity type;
- epitaxially growing a light emitting layer on the first semiconductor multilayer;
- epitaxially growing a second semiconductor multilayer on the light emitting layer, the second semiconductor multilayer including at least one second semiconductor layer having a second conductivity type;
- disposing a second substrate on the second semiconductor multilayer, the second substrate being transparent to light emitted from the light emitting layer;
- and
- bonding the second substrate and the second semiconductor multilayer through direct bonding with heating the vicinity of an interface between the second substrate and the second semiconductor multilayer.
A method for producing a light emitting device, the method of comprising the steps of:
- epitaxially growing a semiconductor multilayer on a first substrate, the semiconductor multilayer including a light emitting layer, first semiconductor layer of a first conductivity type, and a second semiconductor layer of a second conductivity type, the light emitting layer being interposed between the first semiconductor layer and the second semiconductor layer;
- disposing a second substrate which is transparent to light emitted from the light emitting layer on the semiconductor multilayer;
- bonding the second substrate and the semiconductor multilayer through direct bonding with heating a vicinity of an interface between the second substrate and the semiconductor multilayer;
- and
- removing at least part of the first substrate;
- and
- forming a pair of electrodes electrically connected to the first semiconductor layer and the second semiconductor layer, respectively.
Dependencies are inferred from the claim text.