Plasma treating method using hydrogen gas
AssigneeFujitsu Limited
InventorsShuzo Fujimura, Tetsuya Takeuchi, Takeshi Miyanaga, Yoshimasa Nakano, Yuji Matoba
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AssigneeFujitsu Limited
InventorsShuzo Fujimura, Tetsuya Takeuchi, Takeshi Miyanaga, Yoshimasa Nakano, Yuji Matoba
Estimating the term…
A plasma treating method subjects an object surface to a plasma treating within a chamber. First, first and second gasses are supplied into the chamber, where the first gas includes hydrogen molecules as a main component, the second gas includes a quantity of hydrogen less than that included in the first gas and is selected from a group of materials consisting of organic compounds and inorganic compounds, the organic compounds include hydrogen and oxygen and the inorganic compounds include hydrogen. Second, plasma of a mixed gas which is made up of the first and second gasses is generated within the chamber to subject the object surface to the plasma treating. Preferably, the second gas is water vapor.
A plasma etching method for plasma etching a resist layer on a surface of an object within a chamber, said plasma etching method comprising:
Dependencies are inferred from the claim text.