Semiconductor integrated circuit device
AssigneesHitachi, Ltd., Hitachi VLSI Engineering Corp.
InventorsKanji Otsuka, Takayuki Okinaga, Yuji Shirai, Takashi Miwa, Toshihiro Tsuboi, Shouji Matsugami
Life of this patent
Estimating the term…
Loading patent…
AssigneesHitachi, Ltd., Hitachi VLSI Engineering Corp.
InventorsKanji Otsuka, Takayuki Okinaga, Yuji Shirai, Takashi Miwa, Toshihiro Tsuboi, Shouji Matsugami
Estimating the term…
A semiconductor circuit device includes a multi-layered substrate comprising a plurality of signal lines sandwiched between a power source line and a ground line, with insulation layers formed therebetween to reduce fluctuation of a ground line potential at the time of simultaneous switching of the signal lines and to increase the operational speed. The signal lines provides bidirectional current paths and is disposed between the current source line and the ground line. The multi-layered substrate is formed around a semiconductor pellet. Electrode pads are formed on the insulation layer over the ground line on the same level as the signal lines and generally on the same level as the main surface of the semiconductor pellet where electrodes pads are formed. Bonding wires are used to electrically connect the electrode pads on the pellet and the electrodes formed on the insulation layer. Additional bonding wires are used to electrically connect the electrode pads formed on the insulation layer and electrode pads formed on the power source line which is at a higher level and further away from the electrode pads formed on the insulation layer. Some of the electrode pads formed on the insulation layer is directly connected to the ground line using a side plate extension.
A semiconductor integrated circuit device comprising:
Dependencies are inferred from the claim text.