Semiconductor device with a non-uniformly doped channel
AssigneeSharp Kabushiki Kaisha
InventorAlberto O. Adan
Life of this patent
Estimating the term…
Abstract
A semiconductor device with a non-uniformly and lightly doped channel comprises a gate electrode formed on a silicon substrate of first conductivity through the intermediary of a gate oxide dielectric film, and an extension of each side walls of the gate electrode composed of a thin polysilicon layer which is substantially thinner than the gate electrode, the silicon substrate having a channel region in which its central part is doped with ions of first conductivity at a concentration higher than in the silicon substrate and its part below the thin polysilicon layer is doped with ions of first conductivity at a concentration higher than in the central part, and having at an outer region of the channel region a source-drain region doped with ions of second conductivity.
Claims5
A semiconductor device with a non-uniformly and lightly doped channel comprising
- a gate electrode having side walls formed on a gate oxide dielectric film, said gate oxide dielectric film being formed on a silicon substrate of a first conductivity type film;
- an extension extending from and in contact with each side wall of the gate electrode, the extensions being composed of a thin polysilicon layer on the gate oxide dielectric film, said thin polysilicon layer being substantially thinner than the gate electrode;
- the silicon substrate including a channel region, said channel region having a central portion which is doped with ions of a first conductivity type at a concentration higher than in the silicon substrate and edge portions located below each thin polysilicon layer extension doped with ions of the first conductivity type at a concentration higher than in the central portion, and having at an outer region of the channel region source-drain regions doped with ions of a second conductivity type.
Dependencies are inferred from the claim text.