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US 5,401,981 AGranted
Threshold switching device
AssigneeDow Corning Corporation
InventorsKeith W. Michael, Udo C. Pernisz
Life of this patent
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Abstract
This invention relates to a threshold switching device which exhibits negative differential resistance, and which is made by depositing a silicon dioxide film derived from hydrogen silsesquioxane resin between at least two electrodes and then applying a voltage above a threshold voltage across the electrodes.
Claims15
A threshold switching device having negative differential resistance produced by a process comprising
- depositing a film comprising silicon dioxide formed from hydrogen silsesquioxane resin between at least two electrodes and applying a direct current voltage above a threshold voltage for the film across the electrodes, wherein the film has a density between about 0.9 and about 2.1 g/cc.
A threshold switching device having negative differential resistance made by a method comprising
- depositing a film comprising silicon dioxide and one or more modifying ceramic oxides between at least two electrodes and applying a direct current voltage above a threshold voltage for the film across the electrodes, wherein the silicon oxide and a modifying ceramic oxide film is formed from hydrogen silsesquioxane resin and a modifying ceramic oxide precursor respectively and wherein the film has a density between about 40 and about 95% of its theoretical density.
Dependencies are inferred from the claim text.