2D/1D junction device as a Coulomb blockade gate

A semiconductor structure having a conductive layer including a first planar conductivity region and a second planar conductivity region adjacent to said first planar conductivity region and having a potential barrier formed by a transition, from a dimension of said first planar conductivity region which is wide compared to the propagation wavelength of an electron therein to a dimension of said second planar conductivity region which is narrow compared to the propagation wavelength of an electron therein, between said first planar conductivity region and said second planar conductivity region, said semiconductor structure further including

• means for inducing an increased population of electrons in a layer of semiconductor material, said layer having a thickness approximating an electron wavelength to form said first planar conductivity region and said second planar conductivity region.

A method of establishing a potential barrier in a semiconductor material including the steps of

• establishing first and second planar conductivity regions having a transition therebetween from a dimension of said first planar conductivity region which is wide in the plane of said first planar conductivity region compared to the wavelength of an electron therein to a dimension of said second planar conductivity region which is narrow in the plane of said second planar conductivity region compared to the wavelength of the electron in the first region, and
• inducing an increased population of electrons in a layer of semiconductor material, said layer having a thickness approximating an electron wavelength to form said first planar conductivity region and said second planar conductivity region.