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US 5,401,716 AGranted
Method for manufacturing superconducting patterns
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
Life of this patent
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Abstract
A manufacturing method of Josephson devices is described. A superconducting ceramic film is deposited on a non-conductive surface and partly spoiled in order to form a barrier film by which two superconducting regions is separated. The spoiling is performed by adding a spoiling element into the ceramic film by ion implantation.
Claims21
A method of producing a superconducting pattern comprising:
- forming an oxide superconducting film on a surface;
- having its C plane parallel to a surface of a substrate in said film;
- wherein a selected portion of said superconducting film is doped with dopant in order that the superconductivity in said portion is decreased.
A method of producing a superconducting pattern comprising:
- forming an oxide superconducting film on a surface of a non-superconducting substrate having its C plane parallel to said surface in said film;
- wherein a selected portion of said superconducting film is doped with dopant in order that the superconductivity in said portion is decreased and said portion having a decreased superconductivity is utilized as an insulating portion so that said superconducting portion is electrically isolated from adjacent superconducting portion.
A method of producing a superconducting pattern comprising:
- forming an oxide superconducting film on a surface of a non-superconducting substrate;
- having its C plane parallel to said surface in said film;
- wherein a selected portion of said superconducting film is doped with dopant in order that the superconductivity in said portion is decreased and said portion having a decreased superconductivity is utilized as a part of a device so that a superconducting current can be passed therethrough.
A method of producing a superconducting pattern comprising:
- forming an oxide superconducting film on a surface of a non-superconducting substrate;
- establishing a superconducting structure;
- wherein a selected portion of said superconducting structure is doped with dopant using ion implantation method at a concentration of 5.times.10.sup.18 -6.times.10.sup.21 cm.sub.-3 in order that the superconductivity in said portion is decreased;
- wherein said dopant is selected from a group including Si, Ge, B, Ga, P, Ta, Mg, Be, Al, Fe, Co, Ni, Cr, Ti, Mn and Zr, and mixtures thereof.
1 more element
Dependencies are inferred from the claim text.