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US 5,401,715 AGranted
Semiconductor substrate having a superconducting thin film
AssigneeSumitomo Electric Industries, Ltd.
InventorsHideo Itozaki, Keizo Harada, Naoji Fujimori, Shuji Yazu, Tetsuji Jodai
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Abstract
A semiconductor substrate having a silicon substrate and a superconducting thin film layer composed of compound oxide such as Ln.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-.delta. (Ln is lanthanide) and stratified on the silicon substrate, characterized in that an intermediate semiconductor layer composed of compound semiconductor material such as GaAs is interposed between the silicon substrate and the superconducting thin film layer.
Claims1
A semiconductor substrate structure comprising:
- a silicon substrate;
- a superconducting thin film layer composed of compound oxide;
- and
- an intermediate semiconductor layer interposed between said silicon substrate and said superconducting thin film layer, a first side of said intermediate semiconductor layer being in contact with said substrate and a second side of said intermediate semiconductor layer being in contact with said superconducting thin film layer, and wherein said intermediate semiconductor layer comprises a compound semiconductor material.
1 more element
Dependencies are inferred from the claim text.