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AssigneeInternational Business Machines Corporation
InventorsPreveen Chaudhari, Carl A. Mueller, Hans P. Wolf
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A field-effect structure formed on a substrate and comprising a channel with source and drain as well as a gate that is separated from the channel by an insulating layer. The channel is made of a high T.sub.c metal-oxide superconductor, e.g., YBaCuO, having a carrier density of about 10.sup.21 /cm.sup.3 and a correlation length of about 0.2 nm. The channel thickness is preferrable in the order of 1 nm. The superconductor is preferably a single crystalline and oriented such that the superconducting behavior is strongest in the plane parallel to the substrate. With a signal of a few volts applied to the gate, the entire channel cross-section is depleted of charge carriers whereby the channel resistance can be switched between a "zero resistance" (undepleted, superconducting) state and "very high resistance" (depleted state).
A field-effect device with a channel having a superconducting property for use in electronic circuitry, the device comprising
A superconductive field effect device, including
A superconductive field effect device, comprising
Dependencies are inferred from the claim text.