Method for selective annealing of a semiconductor device

A method of producing a semiconductor device comprising the steps of:

• forming a gate oxide layer of a silicon oxide having a first thickness on a surface of a semiconductor substrate;
• depositing a gate electrode material layer containing polysilicon on said gate oxide layer;
• forming a first reflection control layer of a silicon oxide having a second thickness on said gate electrode material;
• etching said gate electrode material and said first reflection control layer for forming a gate electrode;
• implanting conductive impurities into said semiconductor substrate by using said gate electrode as a mask for forming lightly doped drain and source regions;
• depositing a silicon oxide layer over said semiconductor substrate and said gate electrode;
• etching back said silicon oxide layer for forming sidewalls adjacent said gate electrode;
• implanting conductive impurities into said semiconductor substrate for forming drain and source regions at said lightly doped drain and source regions by using said gate electrode and said sidewalls as masks;
• forming a second reflection control layer of a silicon oxide over said semiconductor substrate, said gate electrode and said sidewalls;
• selecting a difference between said first thickness and said second thickness to maximize reflectance of an annealing laser light on the gate electrode and to minimize reflectance of the annealing laser light on the drain and source regions;
• and
• annealing said semiconductor substrate by said annealing laser light.