Method of fabricating a field-effect transistor over gate electrode
AssigneeBell Communications Research, Inc.
InventorWinston K. Chan
Life of this patent
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Abstract
A field-effect transistor in which a metal gate (14) is defined on top of an insulating substrate (12). A free-standing semiconductor thin film (16), obtained by the epitaxial lift-off process, is bonded to both the top of the metal gate and the insulating substrate. Electrodes (20, 22) attached to the top of ends of the semiconductor film complete the transistor.
Claims9
A method of fabricating a transistor comprising the steps of
- forming a conducting body on an upper surface of an insulating substrate so as to extend at least in part above the upper surface of the insulating substrate,
- forming a free-standing semiconductor film, and
- bonding said semiconductor film to an upper surface of the conducting body and to two portions of the upper surface of the insulating substrate on opposing lateral sides of the conducting body.
A method of fabricating a transistor comprising the steps of
- forming a conducting body on an upper surface of an insulating substrate so as to extend at least in part above the upper surface of the insulating substrate,
- forming a free-standing semiconductor film, bending said semiconductor film, and bonding said semiconductor film to an upper surface of the conducting body and to two portions of the upper surface of the insulating substrate on opposing later sides of the conducting body, so that said film is stressed by the conducting body above the upper surface of the insulating substrate.
A method of fabricating a transistor comprising the steps of
- forming a conducting body on an upper surface of an insulating substrate so as to extend at least in part above the upper surface of the insulating substrate,
- forming a free-standing thin semiconductor film, and
- bonding said thin semiconductor film to said conducting body and to two portions of the upper surface of the insulating substrate so as to form lacunae between said conducting body and said portions and over which lacunae said thin film semiconductor film hangs suspended.
A method of fabricating a transistor comprising the steps of
- forming a conducting body on a surface of an insulating substrate,
- growing a semiconducting thin film on a crystalline substrate,
- freeing said semiconducting thin film from said crystalline substrate so as to provide a free-standing semiconducting thin film, and
- bonding the free-standing semiconducting thin film so provided to an upper surface of said conducting body and to two regions of said surface of said insulating substrate on opposing sides of said conducting body.
A method of forming a transistor comprising the steps of
- forming a conducting body on an upper surface of an insulating substrate, said conducting body extending in a first direction along said substrate and extending upwardly at least in part above said upper surface,
- forming a free standing semiconductor film, and
- bonding said semiconductor thin film to an upper surface of said conducting body and to two portions of said upper surface of said insulating substrate on opposing lateral sides of said conducting body, said thin film extending from said two portions over said upper surface of said insulating body without touching said upper surface of said insulating body whereby lacunae are formed between said conducting body and said portions and over which lacunae said thin film hangs suspended.
Dependencies are inferred from the claim text.