Method for manufacturing a surface acoustic wave device
AssigneeSumitomo Electric Industries, Ltd.
InventorsHideaki Nakahata, Shinichi Shikata, Akihiro Hachigo, Naoji Fujimori
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Abstract
A surface acoustic wave device which can operate at a higher frequency range is produced by irradiation with a focused ion beam to produce a narrower electrode width and narrower spacing width between neighboring electrodes in contact with a piezoelectric body, without degrading the reliability of the device. The surface acoustic wave device includes a piezoelectric body 3 and interdigital electrodes 2a and 2b in close contact with the piezoelectric body 3 and formed by using the focused ion beam. In order to increase the frequency of the device, the piezoelectric body 3 may be formed on a substrate 1, for example of diamond.
Claims9
A method for manufacturing a surface acoustic wave device, comprising the steps of:
- (a) preparing a substrate essentially made of at least one of diamond, sapphire and boron nitride;
- (b) irradiating a raw material gas consisting essentially of an organo-metallic compound containing aluminum with a focused ion beam to form an aluminum film on a surface of said substrate, said aluminum film an interdigital electrode having a line and spacing width of about 0.1 to 0.5 .mu.m;
- and
- (c) forming a piezoelectric body in close contact with said interdigital electrode on said surface of said substrate.
A method for manufacturing a surface acoustic wave device, comprising the steps of:
- (a) preparing a thin film essentially made of at least one member selected from the group consisting of diamond, diamond-like carbon film, sapphire and boron nitride on a substrate;
- (b) irradiating a raw material gas consisting essentially of an organo-metallic compound containing aluminum with a focused ion beam to form an aluminum film on a surface of said thin film, said aluminum film forming an interdigital electrode having a line and spacing of about 0.1 to 0.5 .mu.m;
- and
- (c) forming a piezoelectric body in close contact with said interdigital electrode on said surface of said thin film.
A method for manufacturing a surface acoustic wave device, comprising the steps of:
- (a) preparing a thin film essentially made of diamond on a substrate essentially made of silicon;
- (b) irradiating a raw material gas consisting essentially of an organo-metallic compound containing aluminum with a focused ion beam to form an aluminum film on a surface of said thin film, said aluminum film forming an interdigital electrode having a line and spacing width of about 0.1 to 0.5 .mu.m;
- and
- (c) forming a piezoelectric body in close contact with said interdigital electrode on said surface of said thin film.
A method for manufacturing a surface acoustic wave device, comprising the steps of:
- (a) preparing a substrate essentially made of at least one of diamond, sapphire and boron nitride;
- (b) forming a piezoelectric body on a surface of said substrate;
- and
- (c) irradiating a raw material gas consisting essentially of an organo-metallic compound containing aluminum with a focused ion beam to form an aluminum film on a surface of said piezoelectric body, said aluminum film forming an interdigital electrode having a line and spacing width of about 0.1 to 0.5 .mu.m.
Dependencies are inferred from the claim text.