Plasma reactor for performing an etching or deposition method
AssigneeAlcatel Cit
InventorDavid Pearson
Life of this patent
Estimating the term…
Abstract
A plasma reactor for performing an etching or deposition method, said reactor including a vacuum enclosure designed to receive a substrate to be treated, and including means for inserting a gas to be ionized, the plasma, which is produced in a container, being excited by an antenna fed by a radio-frequency power generator, wherein said antenna is composed of an electrical conductor that constitutes a single circular loop having two diametrically-opposite points connected to feed conductors.
Claims5
A plasma reactor for performing an etching or deposition method, said reactor including a vacuum enclosure designed to receive a substrate to be treated, and including means for inserting a gas to be ionized, the plasma, which is produced in a container, being excited by an antenna fed by a radio-frequency power generator, wherein said antenna is composed of an electrical conductor that consisting of a single circular loop having two diametrically-opposite points connected to feed conductors.
Dependencies are inferred from the claim text.