Laminated upper cladding structure for a light-emitting device

A method of forming a buried native oxide in a semiconductor device, comprising the steps of:

• forming a first layer of oxidation-inhibiting III-V semiconductor material containing an element selected from the group consisting of indium and phosphorus;
• forming, on said first layer, a second layer of an aluminum-bearing III-V semiconductor material;
• forming, on said second layer, a third layer of oxidation-inhibiting III-V semiconductor material containing an element selected from the group consisting of indium and phosphorus;
• and
• selectively oxidizing said second layer between said first and second layers by lateral oxidation.

A method of fabricating a semiconductor light-emitting device comprising:

• providing a substrate;
• forming a plurality of layers on said substrate, including forming an active region for lightwave generation;
• forming a laminated cladding structure on said plurality of layers, including forming a first semiconductor cladding film selected to inhibit oxidation and including a second semiconductor cladding film on said first semiconductor cladding film;
• and
• oxidizing selected first regions of said second semiconductor cladding film under oxidizing conditions such that oxide extends to an interface of said first and second semiconductor cladding films, said oxidizing including leaving a second region of said second semiconductor cladding film unoxidized.

A light-emitting device formed on a semiconductor substrate comprising:

• a semiconductor active layer for generating light in response to the conduction of current;
• a semiconductor first cladding layer on a side of said active layer opposite to said semiconductor substrate, said first cladding layer being resistive to oxidation;
• a second cladding layer on a side of said first cladding layer opposite to said active layer, said second cladding layer being generally planar and having an oxidized region and an unoxidized region, said oxidized region extending through said second cladding layer to said first cladding layer;
• and
• a contact in electrical contact with said oxidized region for electrical communication between said active layer and said first cladding layer.

A semiconductor laser comprising:

• a semiconductor substrate;
• a lower semiconductor layer means disposed on said substrate for confining current flow;
• an active region disposed on said lower cladding layer for generating light, said active region having a generally planar surface;
• an InP layer disposed on said generally planar surface of said active region for combining with said lower semiconductor layer means to confine current flow within said active region, said InP layer being substantially free of aluminum;
• an upper aluminum-bearing semiconductor layer disposed on said InP layer, said upper aluminum-bearing semiconductor layer having a native oxide region and an unoxidized region, said native oxide region extending to said InP layer;
• and
• contact means on said unoxidized region for channeling current to said active region via said unoxidized region and said InP layer.