Tapered semiconductor laser gain structure with cavity spoiling grooves

A laser structure comprising:

• a longitudinally extending body of semiconductor material having first and second vertically extending interfaces at opposite longitudinal ends thereof, and opposed outer horizontally extending surfaces, in which body, electromagnetic radiation is reflected off and travels between said first and second interfaces;
• an electrically conductive contact adjacent to one of said outer surfaces of said body and extending between said first interface and said second interface, said electrically conductive contact being laterally tapered such that a portion of said contact is wider at one location than at another location and wherein body portions adjacent said contact form a gain region of said body which region is defined by the lateral dimensions of said contact;
• and a radiation removal section for receiving a portion of the electromagnetic radiation which is reflected off one of said interfaces and which travels laterally outside said gain region to remove said portion of electromagnetic radiation from said body.