Back to results
US 5,400,352 AGranted
Semiconductor laser and method therefor
AssigneeMotorola, Inc.
InventorsMichael S. Lebby, Saied N. Tehrani
Life of this patent
Estimating the term…
Abstract
A semiconductor laser (10) utilizes a material having a first band gap (26) for an active layer (13) of the laser (10). Monolayers (14) of a material having a smaller band gap are positioned in the active layer (13) without substantially altering the first band gap (26). The monolayers (14) have a combined thickness that is more than approximately 15 percent of the thickness (16) of the active layer (13).
Claims18
A semiconductor laser comprising:
- a gallium arsenide active layer that forms a quantum well;
- a spatial distribution of indium arsenide monolayers within the active layer wherein a band gap within the active layer is approximately 1.4 to 1.7 electron volts.
A quantum well semiconductor device comprising:
- a layer of first material having a first band gap value;
- monolayers of a second material having a second band gap value that is less than the first band gap value, the monolayers of the second material positioned within the layer of first material and comprising at least 15 percent of a thickness of the layer of first material wherein the monolayers of the second material change the first band gap value by less than 15 percent.
A method of forming a quantum well semiconductor device comprising:
- positioning monolayers of a first material having a first band gap within a second material having a second band gap that is larger than the first band gap wherein the second band gap is changed by less than 15 percent and wherein the monolayers have a total thickness that is at least approximately 15 percent of a thickness of the second material.
Dependencies are inferred from the claim text.