Lockout circuit and method for preventing metastability during the termination of a refresh mode

A self-refresh circuit of a dynamic random access memory device, the self-refresh circuit for generating an internal row address strobe signal at an output node of said self-refresh circuit, the self-refresh circuit comprising:

• a) a timing circuit for generating a first timing signal and a second timing signal;
• b) a pulse circuit for generating an active self-refresh cycle pulse having a desired pulse width in response to said second timing signal;
• c) an output circuit having a first input node for accepting said first timing signal and having a second input node for accepting said active self-refresh cycle pulse, said output circuit generating the internal row address strobe signal at the output node of the self-refresh circuit for each occurrence of said active self-refresh cycle pulse when enabled by an active state of said first timing signal on said first input node;
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• d) a lockout circuit responsive to said active self-refresh cycle pulse and an external row address strobe signal, said lockout circuit latching the active state of said first timing signal to said first input node in response to said external row address strobe signal being in an active state and said lockout circuit latching the active state of said first timing signal to said first input node in response to said active self-refresh cycle pulse, and said lockout circuit retaining said first timing signal on said first input node by locking out an effect of a transition of the active self-refresh cycle pulse to an inactive sate when said external row address strobe signal is in the active state and locking out an effect of a transition of said external row address strobe to an inactive state when said active self-refresh cycle pulse is present, said lockout circuit thereby preventing metastability at a termination of the refresh.

A self-refresh circuit of a dynamic random access memory device, the self-refresh circuit for generating an internal row address strobe signal at an output node of said self-refresh circuit, the self-refresh circuit comprising:

• a) a timing circuit for generating a first timing signal and a second timing signal;
• b) a pulse circuit for generating an active self-refresh cycle pulse having a desired pulse width in response to said second timing signal;
• c) a gate circuit responsive to said active self-refresh cycle pulse and an external row address strobe signal, said gate circuit generating a first gate signal in response to said external row address strobe signal being active and generating said first gate signal in response to said active self-refresh cycle pulse and said gate circuit generating a second gate signal in response to said row address strobe signal being inactive and said active self-refresh cycle pulse transitioning to an inactive state;
• d) an output circuit having a first input node for accepting said first timing signal and having a second input node for accepting said active self-refresh cycle pulse, said output circuit generating the internal row address strobe signal at the output node of the self-refresh circuit for each occurrence of said active self-refresh cycle pulse when enabled by an active state of said first timing signal on said first input node;
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• e) a latch circuit for latching the active state of said first timing signal to said first input node in response to said first gate signal, said gate circuit and said latch circuit locking out an effect of an occurrence of the active self-refresh cycle pulse when said external row address strobe signal is in an inactive state and for locking out an effect of a transition of said external row address strobe to said inactive state when said active self-refresh cycle pulse is present, said gate circuit controlling said latch circuit in order to retain the active state of the first timing signal at the latch node during the locking out of the effect of the occurrence of the active self-refresh cycle pulse when the external row address strobe signal is in the inactive state and during the locking out of the effect of the transition of said external row address strobe signal to the inactive state when said active self-refresh cycle pulse is present thereby preventing metastability at a termination of the refresh.

A self-refresh circuit of a dynamic random access memory device, the self-refresh circuit for generating an internal row address strobe signal at an output node of said self-refresh circuit, the self-refresh circuit comprising:

• a) a timing circuit for generating a first timing signal and a second timing signal;
• b) a pulse circuit for generating an active self-refresh cycle pulse having a desired pulse width in response to said second timing signal;
• c) a gate circuit responsive to said active self-refresh cycle pulse and an external row address strobe signal, said gate circuit generating a first gate signal in response to said external row address strobe signal being active and generating said first gate signal in response to said active self-refresh cycle pulse and said gate circuit generating a second gate signal in response to said row address strobe signal being inactive and said active self-refresh cycle pulse transitioning to an inactive state;
• d) an output circuit having a first input node for accepting said first timing signal and having a second input node for accepting said active self-refresh cycle pulse, said output circuit generating the internal row address strobe signal at the output node of the self-refresh circuit for each occurrence of said active self-refresh cycle pulse when enabled by an active state of said first timing signal on said first input node;
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• e) a feed back node serially connecting an input node of said pulse circuit and an output node of said gate circuit, said first gate signal enabling said pulse circuit for the generating of the active self-refresh cycle pulse and said second gate signal disabling said pulse circuit thereby terminating the generating of the active self-refresh cycle pulse and the generating of the internal row address strobe signal for self-refresh.

A dynamic random access memory device having a plurality of memory storage cells for storing electronic data, the dynamic random access memory device performing a refresh in response to an external row address strobe signal in order to refresh the data, said dynamic random access memory device generating an internal clock signal for controlling a timing of the refresh, the dynamic random access memory device comprising:

• a) a control memory cell capable of charge and discharge;
• b) a current source for charging said control memory cell to a potential;
• c) a monitor circuit for monitoring the potential on said control memory cell to determine when the potential of said control memory cell reaches a trip point;
• d) a discharge circuit for discharging said control memory cell in response to the potential on said control memory cell reaching the trip point, a rate of the charge and the discharge of said control memory cell determining a frequency of the internal clock signal;
• e) a pulse circuit for generating an active self-refresh cycle pulse in response to the internal clock signal;
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• f) a lockout circuit responsive to the external row address strobe signal and the active self-refresh cycle pulse, said lockout circuit locking out an effect of the active self-refresh cycle pulse when the external row address strobe signal transitions to an inactive state prior to the generation of the active self-refresh cycle pulse and locking out an effect of a transition of the external row address strobe signal to an inactive state when the active self-refresh cycle pulse is present.

A method for generating an internal row address strobe signal in a dynamic random access memory device comprising the following steps:

• a) generating an internal clock signal to initiate refresh and to control a period of a refresh cycle;
• b) counting a number of periods of said internal clock signal;
• c) generating an active self-refresh cycle signal after a first desired number of counts of said periods of said internal clock signal;
• d) generating an active self- refresh cycle pulse by controlling a pulse width in response to a transition of said self-refresh cycle signal;
• e) generating an active self-refresh mode signal after a second desired number of counts of said periods of said internal clock signal;
• f) latching said active self-refresh mode signal to a control node when an external row address strobe signal is in an active state;
• g) latching said active self-refresh mode signal to said control node in response to said active self-refresh cycle pulse;
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• h) providing an internal row address strobe signal in response to said active self-refresh cycle pulse when said active self-refresh mode signal is latched to said control node.

A method for refreshing a dynamic random access memory device comprising the following steps:

• a) generating a self-refresh cycle signal;
• b) generating a self-refresh mode signal;
• c) generating an active self-refresh pulse having a desired pulse width in response to said self-refresh cycle signal;
• d) latching said self-refresh mode signal to an enable node in response to an external row address strobe signal being in an active state;
• e) enabling the dynamic random access memory device for the refreshing in response to the self-refresh mode signal latched at the enable node;
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• f) refreshing the dynamic random access memory device cells in response to the self-refresh cycle signal.