Nonvolatile memory and a method of writing data thereto

A nonvolatile memory including a memory cell comprising,

• a semiconductor substrate,
• a first electrode on the substrate formed through the intermediary of a gate insulating film,
• a floating gate adjacent to the first electrode formed through the intermediary of an insulating film, and
• a second electrode deposited at least on the floating gate through the intermediary of a first insulating film;
• wherein
• a plurality of the memory cells arranged in the directions of X and Y to form a matrix, at least two memory cells arranged in the direction of X form a memory cell group, said memory cell group having a single first impurity diffused layer and a second impurity diffused layer used in common in the respective cells of the group, the first and second impurity diffused layers are each formed at opposite ends of the memory cell group, and the first electrodes are commonly connected and the second electrodes are commonly connected for memories aligned in the direction of Y, in which only the first electrode of the memory cell to which data are written can be operated by an electric potential approximate to a threshold voltage and the first electrodes of the other memory cells in the memory group including the memory cell to which the data are written can be operated by an electric potential higher than the threshold voltage.

A method of writing data to a desired memory cell of the memory cell group in the nonvolatile memory including a memory cell comprising,

• a semiconductor substrate,
• a first electrode on the substrate formed through the intermediary of a gate insulating film,
• a floating gate adjacent to the first electrode formed through the imtermediary of a first insulating film;
• wherein
• a second electrode deposited at least on the floating gate through the intermediary of a first insulating film;
• wherein
• a plurality of the memory cells arranged in the directions of X and Y to form a matrix, at least two memory cells arranged in the direction of X form a memory cell group said memory cell group having a single first impurity diffused layer and a single second impurity diffused layer used in common in the respective cells of the group, the first and second impurity disused layers are each formed at opposite ends of memory cell group, and the first electrodes are commonly connected and the second electrodes are commonly connected for memory cells aligned in the direction of Y, comprising the steps of:
• applying a voltage approximate to a threshold voltage only to the first electrode of memory cell to which data is written,
• applying a voltage higher than the threshold voltage to the first electrodes of the other memory cells of the memory cell group including the memory cell to which the data is written, and
• applying a prescribed voltage to the single second impurity diffused layer in common of the memory cell group.